Capacitive Electrostatic Control in Optoelectronic Charge Modulation

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Solution Overview

Problem

Conventional Light Emitting Diodes (LEDs) and solar cells face inefficiencies due to poor p-type activation and high resistivity in thin metal layers or transparent conductive films, leading to voltage drops and limited charge utilization.

Innovation Solution

An electrostatic field effect optoelectronic device (EFEOED) with a capacitively coupled plate adjacent to an insulating layer, allowing for charge modulation by applying positive or negative biases to control charge utilization efficiency in n-type and p-type layers, enhancing charge recombination and separation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If thin metal layers or transparent conductive films are used to address poor p-type activation, then charge utilization is enhanced, but resistivity increases and voltage drop occurs

Engineering Contradiction:

Improvecharge utilizationVSAvoidvoltage drop

Core Design Contradiction:

ReliabilityVSLoss of energy

Solution Approach 1:

An insulating layer is introduced as an intermediary between the p-type doped layer and the capacitively coupled plate. This mediator enables electrostatic field effect control of charge carriers without direct electrical contact, avoiding the resistivity issues of thin metal layers while still enhancing charge utilization through field-induced carrier modulation.

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent replaces the conventional metallic or conductive film approach (mechanical/electrical contact) with a capacitive coupling mechanism using an insulating layer. This substitution eliminates direct current flow through the interface, avoiding voltage drops while maintaining effective charge control through electrostatic field effects.

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

2Device complexity

If conventional LEDs are used, then device simplicity is maintained, but p-type activation is poor and performance is limited

Engineering Contradiction:

Improvedevice structureVSAvoidp-type activation

Core Design Contradiction:

Device complexityVSReliability

Solution Approach 1:

The patent adds a vertical dimension to charge control by introducing a capacitively coupled plate above the p-type layer, separated by an insulating layer. This third-dimensional approach enables field effect modulation of charge carriers without complicating the planar device structure, achieving improved p-type activation while maintaining overall device simplicity.

Inventive Principle:

Principle #17Another dimension (Dimensionality change)

3Device complexity

If solar cells use conventional charge collection, then device simplicity is maintained, but carrier collection efficiency is limited

Engineering Contradiction:

Improvecharge collection structureVSAvoidcarrier collection efficiency

Core Design Contradiction:

Device complexityVSProductivity

Solution Approach 1:

The insulating layer serves as a mediator that enables electrostatic control of charge carriers in solar cells without direct electrical contact. By applying voltage to the capacitively coupled plate, the electric field modulates carrier separation and collection efficiency, improving productivity while maintaining device structural simplicity.

Inventive Principle:

Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The EFEOED achieves increased charge utilization efficiency for current and light generation by modulating charges through electrostatic principles, improving performance beyond conventional devices by utilizing the capacitively coupled plate to control electric fields within the device.

Implementation Method 1

electrostatic field effect optoelectronic device (EFEOED), including: a first doped layer; a second doped layer, an insulating layer adjacent the second doped layer, and a capacitively coupled plate adjacent the insulating later

Methodology Applied

Scientific EffectElectrostatic field effect: Electric Field

Implementation Method 2

capacitively coupled plate adjacent the insulating later

Methodology Applied

Scientific EffectCapacitive coupling: Capacitance

Implementation Method 3

modulating charges in at least one layer of the EFEOED by providing either a positive bias or a negative bias to a capacitively coupled plate

Methodology Applied

Scientific EffectElectrostatic induction: Electrostatic Induction

Data Source

PatentUS12015105B2Capacitive control of electrostatic field effect optoelectronic device

Publication Date: 2024.06.18 ROCHESTER INSTITUTE OF TECHNOLOGY

AI summary

A method and device for electrostatically controlling charges in an electrostatic field effect optoelectronic device by modulating charges in at least one layer of the electrostatic field effect optoelectronic device by providing either a positive bias or a negative bias to a capacitively coupled plate of the electrostatic field effect optoelectronic device thereby adjusting the charge utilization efficiency of the device.