Capacitor Isolating Structure With Air Gaps for DRAM Coupling Control
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Solution Overview
Problem
As semiconductor structures, such as DRAM devices, are scaled down, the reduced separation distance between capacitors enhances inductive coupling effects, which are not adequately mitigated by existing isolating structures, affecting performance.
Innovation Solution
Incorporating a semiconductor structure with a substrate, storage node contacts, and capacitor isolating structures that include a first air gap to reduce inductive coupling, where the isolating structures are formed using a method involving multiple dielectric layers and etching processes to create trenches and air gaps between storage node contacts.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If device is scaled down continuously, then integration density is improved, but inductive coupling effect between adjacent capacitor contact holes is enhanced
Solution Approach 1:
The patent introduces an isolating structure as an intermediary element between adjacent capacitor contact holes. This structure includes a first air gap and a first isolating dielectric layer, which act as a mediator to block the inductive coupling effect while allowing the device to be scaled down. The isolating structure is formed on the side wall of the capacitor contact hole, creating a physical barrier that prevents harmful electromagnetic coupling between neighboring structures.
Solution Approach 2:
The patent changes the physical parameters of the isolating structure by introducing air gaps and using dielectric materials with specific properties. The first air gap provides low dielectric constant region that reduces capacitance and inductive coupling, while the first isolating dielectric layer provides high-k material for enhanced insulation. This parameter change in the isolating structure enables effective coupling suppression at scaled dimensions.
2Ease of manufacture
If conventional isolating structure is used, then manufacturing simplicity is maintained, but insulating property is insufficient
Solution Approach 1:
The patent employs a composite isolating structure consisting of multiple materials with different properties: a first air gap (low dielectric constant) and a first isolating dielectric layer (high dielectric constant). This composite structure combines the advantages of both materials - the air gap provides excellent electrical isolation and reduces capacitance, while the dielectric layer provides mechanical support and additional insulation. The composite approach achieves superior insulating property while maintaining compatibility with existing manufacturing processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The introduction of air gaps in the isolating structures minimizes inductive coupling, thereby enhancing the performance of the semiconductor structure by improving insulation and reducing unwanted electrical interactions.
Implementation Method 1
an inductive coupling effect between adjacent capacitor contact holes is also enhanced continuously
Data Source
AI summary
A semiconductor structure and a method for preparing the semiconductor structure are provided. The semiconductor structure includes a substrate, a storage node contact and a capacitor isolating structure. The storage node contact is located on the substrate, and the capacitor isolating structure is located on the substrate, covers a side wall of the storage node contact and includes a first air gap.