Semiconductor Capacitor Structure With Barrier Layer to Prevent Voids
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Solution Overview
Problem
The formation of voids between aluminum-copper alloy and the semiconductor substrate during the drilling process in capacitor structures adversely affects the performance of capacitors in miniaturized semiconductor devices.
Innovation Solution
A capacitor structure is developed with a metal composite structure between the conductive members and the metal layer, including a barrier layer and a metal adhesive layer to prevent void formation, and a method involving a multi-layer structure with dielectric and conductive members to enhance electrical isolation and adhesion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If aluminum-copper alloy is formed in via holes during the drilling process, then electrical connection is achieved, but voids are generated which adversely affects capacitor performance
Solution Approach 1:
A metal composite structure comprising a barrier layer and a metal adhesive layer is introduced as an intermediary between the aluminum-copper alloy and the capacitor structure. The barrier layer prevents intermetallic compound formation, while the metal adhesive layer ensures strong adhesion, thereby eliminating void formation and improving capacitor reliability without compromising electrical connection
Solution Approach 2:
The invention uses a composite metal structure with multiple layers (barrier layer and metal adhesive layer) to combine the benefits of different materials. The barrier layer provides oxidation resistance and prevents intermetallic formation, while the metal adhesive layer provides strong bonding, creating a composite solution that resolves the void formation issue
2Volume of moving object
If miniaturization of circuitry is pursued, then device size is reduced, but manufacturing complexity increases
Solution Approach 1:
The metal composite structure is formed in advance before the aluminum-copper alloy filling process. By pre-establishing the barrier and adhesive layers in the via holes, the subsequent manufacturing steps are simplified, and the structure is better prepared to handle the stresses of miniaturization without increasing overall process complexity
3Object-affected harmful factors
If desmear process is performed to clean surface stains, then surface cleanliness is improved, but aluminum-copper alloy formation still results in voids
Solution Approach 1:
The metal composite structure serves as an intermediary that addresses both surface contamination and void formation issues. The barrier layer and metal adhesive layer work together to ensure proper adhesion and prevent intermetallic compound formation, solving the void problem that persists even after desmear processing
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution prevents void formation, improving the structural integrity and performance of capacitors by ensuring better electrical isolation and adhesion, thus enhancing capacitance and reliability in miniaturized semiconductor devices.
Implementation Method 1
a metal composite structure between the conductive members and the metal layer, including a barrier layer and a metal adhesive layer to prevent void formation
Data Source
AI summary
A capacitor structure includes a first metal layer, a first metal oxide layer, a second metal oxide layer, a first conductive member, a second conductive member and a metal composite structure. The first metal layer has a first surface and a second surface opposite the first surface. The first metal oxide layer is formed on the first surface of the first metal layer. The second metal oxide layer is formed on the second surface of the first metal layer. The first conductive member penetrates through the capacitor structure and is electrically isolated from the first metal layer. The second conductive member is electrically connected to the first metal layer. The metal composite structure is disposed between the second conductive member and the first metal layer.