Semiconductor Capacitor Beam Segmentation for Uniform Film Deposition
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
In DRAM semiconductor devices, the formation of capacitative insulating films and upper electrodes is hindered by gas supply stagnation due to upper electrodes contacting each other, leading to variability in film thickness and reduced beam strength when trying to maintain capacitance through reduced gaps between capacitative cylinders.
Innovation Solution
The capacitors are arranged such that in one direction, adjacent first conductive films are in contact to maintain gas flow, while in other directions, they are separated to ensure uniform gas supply and prevent beam strength reduction, allowing for reduced open portions in the beam without compromising storage electrode surface area.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If the gaps between capacitative cylinders are reduced to maintain capacitance, then the capacitor surface area is increased, but the beam strength is reduced causing storage electrode collapse
Solution Approach 1:
The beam is segmented by introducing open portions that allow feed gas to reach multiple surfaces of the storage electrode simultaneously. This segmentation enables the beam to have fewer open portions while still maintaining adequate gas supply paths, thus preserving beam strength without compromising capacitor surface area.
Solution Approach 2:
The invention utilizes the vertical dimension by forming the storage electrode as a three-dimensional structure with multiple surfaces (top surface and side surfaces) that can all receive feed gas. This dimensional approach allows the electrode to maintain capacitance through increased surface area without requiring the beam to have numerous open portions, thereby preserving beam strength.
2Manufacturing precision
If the number of open portions in the beam is increased to prevent gas supply stagnation, then the film thickness uniformity is improved, but the beam strength is reduced
Solution Approach 1:
The invention applies local quality by providing open portions at specific locations on the beam that directly face the storage electrode surfaces. This targeted approach ensures that feed gas is supplied uniformly to critical areas (top and side surfaces) without requiring numerous open portions throughout the entire beam, thus maintaining both film thickness uniformity and beam strength.
3Ease of manufacture
If upper electrodes are formed by supplying feed gas from beam open portions, then the capacitative insulating film and upper electrode are formed, but gas supply stagnates in sections not facing open portions causing film thickness variability
Solution Approach 1:
The beam structure is segmented with strategically positioned open portions that enable feed gas to access multiple surfaces of the storage electrode (top surface and side surfaces). This segmentation eliminates gas supply stagnation in previously inaccessible areas, ensuring uniform film thickness across all electrode surfaces while maintaining a simple manufacturing process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This arrangement maintains uniform film thickness and prevents deterioration in capacitor characteristics, allowing for reduced open portions in the beam while maintaining effective surface area and beam strength, thus preventing storage electrode collapse.
Implementation Method 1
The capacitative insulating film and the upper electrode are formed by supplying a feed gas from the open portions of the abovementioned beam
Data Source
AI summary
A semiconductor device provided with a capacitor that includes a plurality of cylindrical or columnar storage electrodes provided periodically on a semiconductor substrate, capacitor insulation films that cover the wall surfaces of the storage electrodes, and first conductive films provided on the capacitor insulation film and facing the storage electrodes, wherein the first conductive films of the capacitors adjacent in a first direction in which the storage electrodes are arranged are in contact with each other, and the first conductive films of capacitors adjacent in remaining other directions in which the storage electrodes are arranged are separated from each other.