Capacitor Structure Using Bonding Pads as Electrodes
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current semiconductor technologies face challenges in efficiently utilizing metal bonding pads for both signal paths and capacitor structures within semiconductor devices, leading to suboptimal area usage and performance.
Innovation Solution
A semiconductor structure is developed with bonded pairs of metal bonding pads acting as electrodes and a node dielectric, forming a capacitor structure between semiconductor dies, allowing for metal-to-metal bonding to create efficient signal paths and capacitor components within the same assembly.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If metal bonding pads are used for signal paths between semiconductor dies, then electrical connectivity is achieved, but area utilization is suboptimal because dedicated capacitor structures cannot be formed
Solution Approach 1:
The metal bonding pads are designed to serve dual functions: providing electrical signal paths between semiconductor dies and forming capacitor electrodes. By configuring subsets of bonding pads as first and second electrodes with node dielectric material between them, the same structural elements perform both inter-die connectivity and energy storage functions, thereby improving area utilization without significantly increasing structural complexity
Solution Approach 2:
The invention merges the previously separate functions of bonding pads (signal transmission) and capacitor electrodes (energy storage) into a single integrated structure. The bonding pads are configured such that they simultaneously provide electrical connectivity and form capacitor components, combining multiple functions into one element to optimize area usage
2Quantity of substance
If separate capacitor structures are formed within semiconductor devices, then charge storage capability is improved, but area usage becomes inefficient due to dedicated capacitor space requirements
Solution Approach 1:
The bonding pads are configured to serve dual purposes: maintaining their primary function of providing electrical signal paths between dies while simultaneously functioning as capacitor electrodes for charge storage. This multi-functionality eliminates the need for separate dedicated capacitor structures, achieving charge storage capability without sacrificing area efficiency
Solution Approach 2:
The invention combines the signal path function and charge storage function into the same physical structure. By using subsets of the bonding pad array to form capacitor electrodes with node dielectric material between them, the device achieves both electrical connectivity and charge storage in the same area that would otherwise be occupied only by bonding pads
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances area utilization and performance by integrating capacitors within the semiconductor device, enabling efficient charge storage and release, while maintaining conductive paths between semiconductor dies.
Implementation Method 1
Metal-to-metal bonding may be employed to provide signal paths between the pair of semiconductor dies
Implementation Method 2
the node dielectric comprises portions of a first bonding-level dielectric layer laterally surrounding the first metal bonding pads and disposed between laterally neighboring pairs of the first metal bonding pads and portions of a second bonding-level dielectric layer laterally surrounding the second metal bonding pads
Data Source
AI summary
A semiconductor structure includes a bonded assembly of a first semiconductor die including first metal bonding pads and a second semiconductor die including second metal bonding pads, and a capacitor structure including a first electrode, a second electrode, and a node dielectric. The first electrode includes first bonded pairs of metal bonding pads. The second electrode includes second bonded pairs of metal bonding pads. The node dielectric includes portions dielectric material layers laterally surrounding the metal bonding pads.