Capacitor Structure With Comb-Shaped Electrodes For Semiconductor Miniaturization
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Solution Overview
Problem
Existing semiconductor devices face challenges in miniaturization due to the larger size requirements of capacitors compared to other electronic components, which hinders the shrinkage of semiconductor devices.
Innovation Solution
The implementation of a capacitor structure featuring comb-shaped electrodes, a bottom electrode with multiple portions, an insulator layer, and a top electrode, where multiple capacitor structures are stacked vertically and intersecting/crossing configurations enhance capacitance without increasing the design area, and separate portions of the bottom electrode are electrically coupled for reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If capacitor size is increased to achieve required capacitance, then capacitance is improved, but device area is worsened
Solution Approach 1:
The patent transitions from planar capacitor layouts to three-dimensional stacked configurations. Multiple capacitor structures are stacked vertically across different layers, utilizing the vertical dimension to increase capacitance without expanding the horizontal device area. This is achieved through multiple conductive plates arranged in stacked layers with dielectric materials between them.
Solution Approach 2:
The patent implements nested capacitor structures where conductive plates and dielectric layers are arranged in concentric or overlapping patterns. Inner conductive elements are surrounded by outer conductive elements with dielectric materials in between, creating nested configurations that maximize capacitance density within a compact footprint.
2Quantity of substance
If capacitor structure is made more complex to increase capacitance, then capacitance is improved, but manufacturing difficulty is worsened
Solution Approach 1:
The capacitor structure is divided into multiple discrete segments including separate conductive plates, dielectric layers, and interlayer connections. Each segment can be independently formed and positioned, allowing for modular manufacturing processes. The segmented design enables systematic assembly of complex three-dimensional capacitor structures through standard semiconductor fabrication techniques.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration increases capacitance without expanding the design area and enhances reliability by allowing for the stacking and intersection of capacitor structures, effectively addressing the size constraints of capacitors in semiconductor devices.
Implementation Method 1
An insulator layer is disposed over the bottom electrode... The dielectric material is disposed over the first capacitor structure
Data Source
AI summary
A capacitor structure includes a first comb-shaped electrode, a second comb-shaped electrode, a bottom electrode, an insulator layer, and a top electrode. The first comb-shaped electrode has a first pad and first fingers connecting to the first pad. The second comb-shaped electrode has a second pad and second fingers connecting to the first pad, wherein one of the second fingers is disposed between two adjacent first fingers. The bottom electrode includes a first portion, a second portion and a third portion which are spaced apart, wherein the first portion and the third portion are electrically coupled to the first comb-shaped electrode and the second comb-shaped electrode, respectively. The insulator layer is disposed over the bottom electrode. The top electrode is disposed over the insulator layer.