Capacitor Contact Protection During Copper Via Planarization
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Solution Overview
Problem
In conventional semiconductor structures, the contact connected to the capacitor structure is not protected during the planarization process, leading to contamination by copper and reduced yield.
Innovation Solution
A protective layer is formed over the contact before the planarization process, covering it during the formation of a conductive hole, thereby reducing contamination and maintaining a high yield.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a planarization process is performed on a through hole filled with copper, then the surface is planarized, but the contact is easily contaminated by copper
Solution Approach 1:
A protective layer is introduced as an intermediary between the contact and the planarization process. This protective layer prevents direct contact between the copper filling material and the contact during planarization, thereby preventing contamination while still allowing the planarization process to proceed on the copper-filled through hole.
Solution Approach 2:
The protective layer is formed on the contact before the planarization process is performed. This preliminary protective action ensures that the contact is already shielded when the planarization process begins, preventing contamination from occurring in the first place.
2Object-affected harmful factors
If a protective layer is formed on the contact, then contamination is reduced, but the manufacturing process becomes more complex
Solution Approach 1:
The protective layer is applied locally only to the contact region rather than uniformly across the entire substrate. This localized approach provides contamination protection where needed while minimizing the overall complexity and material usage of the manufacturing process.
Data Source
AI summary
Disclosed is a semiconductor structure including a substrate, a capacitor structure, an interlayer dielectric, a contact, a protective layer, and a conductive hole. The capacitor structure is disposed in the substrate. The interlayer dielectric is disposed on the substrate, and exposes a portion of the capacitor structure. The contact is disposed in the interlayer dielectric, and is electrically connected to the capacitor structure. The protective layer is disposed on the interlayer dielectric, and covers the contact. The conductive hole penetrates the protective layer and the interlayer dielectric. A top surface of the conductive hole is higher than a top surface of the contact. A manufacturing method of a semiconductor structure is also provided.