Capacitor Plate Corners High Voltage Breakdown Reliability

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Solution Overview

Problem

High voltage breakdown reliability in galvanic isolators is compromised due to dielectric discontinuities at the corners of high voltage isolation capacitors, leading to electric field perturbations and reduced breakdown characteristics.

Innovation Solution

A dielectric discontinuity abatement structure is formed around the corners of the high voltage isolation capacitor by using a sidewall dielectric structure with a dielectric constant matching that of the underlying material, reducing the formation of a dielectric disjunctive interface and enhancing the electric field distribution.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional capacitor structures with sharp corners are used, then manufacturing is simpler, but electric field perturbations occur at corners leading to reduced breakdown reliability

Engineering Contradiction:
Improvehigh voltage breakdown reliabilityVSAvoidcapacitor structure complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent applies curvature by replacing sharp corners with rounded corners on the capacitor plates. This geometric modification eliminates the dielectric discontinuities that occur at sharp corners, thereby reducing electric field perturbations and improving high voltage breakdown reliability without significantly complicating the manufacturing process.

Inventive Principle:
Principle #14Spheroidality (Curvature)

2Reliability

If dielectric discontinuity abatement structures are added around capacitor corners, then electric field distribution is improved and breakdown reliability increases, but manufacturing complexity increases

Engineering Contradiction:
Improvebreakdown reliabilityVSAvoidfabrication ease
Core Design Contradiction:
ReliabilityVSEase of manufacture

Solution Approach 1:

The rounded corner design eliminates the need for complex abatement structures by inherently reducing electric field concentration through geometric curvature. This approach improves breakdown reliability while maintaining ease of manufacture, as the rounding can be achieved through standard fabrication processes without adding significant structural complexity.

Inventive Principle:
Principle #14Spheroidality (Curvature)

3Reliability

If sharp cornered capacitor plates are used, then device complexity is lower, but peak electric fields at corners cause lateral breakdown discharge

Engineering Contradiction:
Improvesurge suppressionVSAvoidcapacitor structure
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

By rounding the corners of capacitor plates, the patent eliminates the sharp edges that concentrate electric fields and initiate lateral breakdown discharge. This geometric modification improves surge suppression capability by distributing the electric field more uniformly across the capacitor structure without requiring additional complex components.

Inventive Principle:
Principle #14Spheroidality (Curvature)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach significantly improves the high voltage reliability of galvanic isolators by reducing peak electric fields at the capacitor plate corners and minimizing lateral breakdown discharge, thereby enhancing surge suppression and reducing HV surge hysteresis effects.

Implementation Method 1

A dielectric structure located between the side surface of the metal structure and the second dielectric layer has the first dielectric constant

Methodology Applied
Scientific EffectDielectric discontinuity: Dielectric Permittivity

Data Source

PatentUS10679935B2Structure and method for improving high voltage breakdown reliability of a microelectronic device
Publication Date: 2020.06.09 TEXAS INSTRUMENTS INC
  • US10679935B2 patent drawing
  • US10679935B2 patent drawing
  • US10679935B2 patent drawing

AI summary

A method and structure suitable for, e.g., improving high voltage breakdown reliability of a microelectronic device such as a capacitor usable for galvanic isolation of two circuits. A first dielectric layer has a first dielectric constant located over a semiconductor substrate. A metal structure located over the first dielectric layer has a side surface. A second dielectric layer having a second different dielectric constant is located adjacent the metal structure. A dielectric structure located between the side surface of the metal structure and the second dielectric layer has the first dielectric constant.