Capacitor Coupler Insulation Stack for High-Voltage Signal Isolation

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Solution Overview

Problem

Existing signal transmission devices with capacitor couplers face challenges in manufacturing cost and throughput due to the complexity and time-consuming processes involved in forming thick insulating films to withstand high electric fields.

Innovation Solution

The signal transmission device incorporates a capacitor coupler structure with a second insulating film made of a material with higher insulation breakdown voltage, covering the outer peripheral portion of the upper electrode, and a third insulating film made of an insulating organic material, such as polyimide, which is easier and faster to form by coating.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a thick insulating film is formed to withstand high electric fields, then insulation reliability is improved, but manufacturing complexity and time increase

Engineering Contradiction:
Improveinsulation reliabilityVSAvoidmanufacturing complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The insulating film is segmented into two distinct layers: a first insulating film (inorganic material like silicon oxide or silicon nitride) and a second insulating film (organic material like polyimide). Each layer serves a specific function - the first layer provides high breakdown voltage near the electrode, while the second layer provides overall insulation and mechanical protection. This segmentation allows each layer to be optimized independently, reducing manufacturing complexity while maintaining reliability.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent uses a composite insulating structure combining inorganic and organic materials. The inorganic first insulating film offers superior electrical breakdown resistance, while the organic second insulating film provides ease of formation through coating processes. This composite approach leverages the strengths of both material types to achieve reliable insulation without the complexity of forming a single thick inorganic film.

Inventive Principle:
Principle #40Composite materials

2Reliability

If a thick insulating film is formed to withstand high electric fields, then insulation reliability is improved, but manufacturing time increases

Engineering Contradiction:
Improveinsulation reliabilityVSAvoidmanufacturing throughput
Core Design Contradiction:
ReliabilityVSProductivity

Solution Approach 1:

By dividing the insulating film into two thinner layers rather than forming one thick layer, the manufacturing process becomes faster. The first insulating film can be formed by standard thin film deposition, and the second insulating film can be applied by coating processes that are generally faster and more scalable. This segmentation improves manufacturing throughput while maintaining the total insulation performance needed for high voltage applications.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent changes the material parameters of the insulating film - specifically using organic material for the second layer which can be formed by coating processes rather than lengthy deposition processes. This parameter change (material type and formation method) significantly reduces manufacturing time while maintaining adequate insulation properties for the application requirements.

Inventive Principle:
Principle #35Parameter changes

3Reliability

If a thick insulating film is formed to withstand high electric fields, then insulation reliability is improved, but manufacturing cost increases

Engineering Contradiction:
Improveinsulation reliabilityVSAvoidmanufacturing cost
Core Design Contradiction:
ReliabilityVSEase of manufacture

Solution Approach 1:

The composite insulating structure uses cost-effective organic material for the second insulating film, which can be applied by simple coating processes rather than expensive and time-consuming deposition processes. This material selection strategy reduces manufacturing costs while the first insulating film (formed by standard deposition) ensures the necessary electrical reliability. The combination achieves reliable insulation at lower cost.

Inventive Principle:
Principle #40Composite materials

Solution Approach 2:

Changing the formation method parameter from thick film deposition to coating processes for the second insulating layer significantly reduces manufacturing cost. Coating processes are generally more economical, faster, and more scalable than deposition processes, thereby reducing overall manufacturing cost while maintaining insulation reliability through the complementary first layer.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration effectively restricts insulation breakdown in the insulating films, even under high voltage applications, while simplifying the manufacturing process and reducing costs by utilizing a more efficient film formation method.

Implementation Method 1

a capacitor coupler electrically isolating and separating a high voltage circuit and a low voltage circuit and configured to transmit a signal between the high voltage circuit and the low voltage circuit

Methodology Applied
Scientific EffectCapacitive coupling: Capacitance

Implementation Method 2

The second insulating film is made of a material having a higher insulation breakdown voltage than the third insulating film

Methodology Applied
Scientific EffectInsulation breakdown resistance: Electrical Resistance

Data Source

PatentUS20250062256A1Signal transmission device
Publication Date: 2025.02.20 DENSO CORP
  • US20250062256A1 patent drawing
  • US20250062256A1 patent drawing
  • US20250062256A1 patent drawing

AI summary

A signal transmission device having a capacitor coupler includes: a semiconductor substrate; a first insulating film disposed above the semiconductor substrate; a lower electrode disposed above the semiconductor substrate across a portion of the first insulating film; an upper electrode disposed opposite the lower electrode across the first insulating film, forming a capacitor together with the lower electrode, and configured to be applied with a voltage higher than a voltage applied to the lower electrode; a second insulating film disposed above the first insulating film and covering at least a portion in an outer peripheral portion of the upper electrode that is in contact with the first insulating film; and a third insulating film disposed above the second insulating film and made of an insulating organic material. The second insulating film is made of a material having a higher insulation breakdown voltage than the third insulating film.