Multilayer Capacitor Cover Structure for Void-Controlled Crack Resistance
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Solution Overview
Problem
Existing stacked ceramic capacitors face challenges in balancing characteristic reliability and structural strength due to variations in void density and occupation area ratio across insulator layers, leading to potential cracks and reduced integrity.
Innovation Solution
The design incorporates a covering part with alternating insulator layers and dummy electrodes, where the innermost layer has lower void density and occupation area ratio, enhancing the anchor effect for the base electrode, thereby stabilizing the functional part and improving contact strength.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If insulator layers with uniform void density are used in the covering part, then manufacturing simplicity is maintained, but characteristic reliability deteriorates due to cracks and reduced structural strength
Solution Approach 1:
The patent applies local quality by differentiating void density across different positions within the insulator layers. Specifically, the insulator layers are designed to have different void densities in a first direction (stacking direction), with the void density increasing from the inner side toward the outer side of the covering part. This localized variation in void density improves characteristic reliability by reducing cracks while maintaining a relatively simple overall structure.
2Strength
If the covering part is made thicker to improve structural strength, then strength is improved, but manufacturing precision deteriorates due to increased void formation
Solution Approach 1:
The patent implements local quality by creating a gradient in void density within the insulator layers. The void density is controlled to increase from the inner side to the outer side of the covering part, with the outermost insulator layer having the highest void density. This localized control allows the covering part to achieve sufficient structural strength without requiring excessive thickness, thereby maintaining manufacturing precision in void control.
3Strength
If void density is increased in outer insulator layers to improve anchor effect, then contact strength is improved, but reliability deteriorates due to potential crack propagation
Solution Approach 1:
The patent applies local quality by strategically distributing void density across different insulator layers. The void density is designed to increase from the inner side to the outer side of the covering part, with the outermost insulator layer having the highest void density to enhance the anchor effect and contact strength. This localized optimization improves contact strength while the overall gradient structure prevents crack propagation, thereby maintaining characteristic reliability.
4Reliability
If the number of insulator layers is increased to improve coverage, then reliability is improved, but device complexity increases
Solution Approach 1:
The patent implements local quality by varying the void density within the insulator layers rather than increasing the number of layers. The insulator layers are designed with a void density gradient from the inner side to the outer side of the covering part, which improves characteristic reliability and contact strength while avoiding the increased device complexity that would result from adding more layers.
Data Source
AI summary
An electronic component includes a functional part including a first surface facing a first side in a first direction, and a cover overlapped with the first surface. The cover includes at least two insulator layers, at least one dummy electrode, and a base electrode. The at least two insulator layers and the at least one dummy electrode are overlapped alternately in the first direction. The base electrode is overlapped with an outermost one of the insulator layers from the first side. The cover includes a first range overlapped with the base electrode or the dummy electrode in a plan perspective view in the first direction. In the first range, an innermost one of the insulator layers is smaller in void density than the outermost one of the insulator layers, and/or the innermost one of the insulator layers is smaller in void ratio than the outermost one of the insulator layers.