Capacitor Structure With Cross-Coupled Electrodes
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Solution Overview
Problem
Conventional capacitor structures in high-frequency and high-speed electronic systems face limitations in noise inhibition, area efficiency, and integration density due to their 2D plane structure and reliance on discrete or multi-layer designs, which result in increased area occupation and reduced frequency range.
Innovation Solution
The use of elongated electrode plates with cross-coupling capabilities, allowing for top, bottom, and side coupling through fewer vias, to achieve maximum capacitance within a minimal area, enhancing noise inhibition and integration density.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If conventional 2D plane capacitor structures are used, then the manufacturing process is simple, but the capacitance density and area efficiency are low
Solution Approach 1:
The patent transitions from conventional 2D plane capacitor structures to a 3D立体 structure by stacking multiple electrode plates (first electrode plate, second electrode plate, third electrode plate) with dielectric layers in between. This vertical stacking arrangement increases the effective capacitance area without increasing the planar footprint, thereby improving capacitance density while maintaining manufacturing feasibility through standard lamination processes.
2Quantity of substance
If multi-layer capacitor designs are adopted, then the capacitance increases, but the area occupation and via complexity increase
Solution Approach 1:
The patent achieves increased capacitance by utilizing the vertical dimension through multi-layer stacking of electrode plates and dielectric layers. Instead of expanding horizontally with larger 2D planes, the design stacks multiple capacitive units vertically, each contributing to the total capacitance while occupying minimal planar area. The first, second, and third electrode plates are arranged in vertical succession with dielectric layers, creating a compact high-capacitance structure.
Solution Approach 2:
The patent employs a nested arrangement where multiple electrode plates and dielectric layers are stacked concentrically or in sequence, with each layer nested within the vertical space of the overall structure. The first electrode plate is positioned above the second electrode plate, which is above the third electrode plate, creating a compact nested configuration that maximizes capacitance within a confined area.
3Device complexity
If conventional capacitor structures are used, then the device complexity is low, but the noise inhibition capability at high frequency is poor
Solution Approach 1:
The patent improves high-frequency noise inhibition by transitioning to a 3D stacked capacitor structure. The vertical arrangement of multiple electrode plates and dielectric layers creates multiple parallel capacitance paths and reduces the equivalent series inductance compared to conventional 2D structures. This立体 configuration provides better high-frequency decoupling performance by offering lower impedance paths for noise current, effectively抑制ing high-frequency noise despite the increased structural complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly increases capacitance while minimizing area occupation, improving noise reduction capabilities and integration density in high-frequency systems, and allows for compact packaging in electronic systems.
Implementation Method 1
a capacitor structure is provided, which comprises a dielectric material layer, a first electrode, and a second electrode. The dielectric material layer is located between the first electrode and the second electrode.
Data Source
AI summary
A capacitor structure with a cross-coupling design is provided. In the capacitor structure, conductive lines or electrode plates are coupled together by cross coupling an electrode above or below or aside the other electrode. By cross coupling and fewer vias, the largest capacitance value can be obtained within a minimum area. The capacitor structure provided can also be applied to a high-frequency high-speed module or system to enhance noise inhibition capability of a capacitive substrate.