Capacitor Dielectric Gradient for Miniaturization Leakage

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Solution Overview

Problem

Miniaturization of capacitors in integrated circuitry leads to reduced capacitance, making it challenging to meet performance parameters, and current methods to increase capacitance result in problematic leakage issues.

Innovation Solution

The use of a metal oxide mixture with a continuous concentration gradient of high and low dielectric constant compositions as the capacitor dielectric, where the high dielectric constant composition is concentrated near the capacitor electrode and decreases as distance from the electrode increases, effectively balancing capacitance and leakage.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Area of stationary object

If the size of capacitors is decreased to achieve miniaturization, then the area consumed by individual circuit components is reduced, but the capacitance decreases correspondingly

Engineering Contradiction:
Improvearea consumed by capacitorVSAvoidcapacitance
Core Design Contradiction:
Area of stationary objectVSQuantity of substance

Solution Approach 1:

The patent changes the dielectric constant parameter of the capacitor by using a metal oxide mixture with varying composition. The dielectric layer contains a gradient of metal oxide concentrations, with higher dielectric constant materials positioned strategically to maximize capacitance in the miniaturized structure without increasing overall area.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent employs a composite dielectric structure consisting of a metal oxide mixture combined with other dielectric materials. This composite approach allows the capacitor to achieve higher effective capacitance in a reduced area by leveraging the complementary properties of different materials within the dielectric layer.

Inventive Principle:
Principle #40Composite materials

2Quantity of substance

If the thickness of dielectrics is decreased to increase capacitance, then the capacitance increases, but current leakage becomes problematic

Engineering Contradiction:
ImprovecapacitanceVSAvoidcurrent leakage
Core Design Contradiction:
Quantity of substanceVSObject-generated harmful factors

Solution Approach 1:

The patent applies local quality by creating a non-uniform dielectric structure where the metal oxide concentration varies through the thickness of the dielectric layer. High dielectric constant materials are concentrated in specific regions to maximize capacitance, while other regions maintain lower leakage characteristics, thus achieving high capacitance without proportionally increasing leakage.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent modifies the dielectric properties by changing the composition and thickness parameters of the metal oxide layer. By optimizing the concentration gradient and thickness distribution of the metal oxide mixture, the capacitor achieves enhanced capacitance while the varied composition helps suppress leakage currents that would otherwise occur in uniformly thin dielectric structures.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enhances capacitance while minimizing leakage, enabling the development of miniaturized capacitors that meet performance requirements for future generations of integrated circuitry.

Implementation Method 1

a metal oxide mixture with a continuous concentration gradient of high and low dielectric constant compositions as the capacitor dielectric

Methodology Applied
Scientific EffectDielectric: Dielectric

Data Source

PatentUS8528175B2Methods of forming capacitors
Publication Date: 2013.09.10 MICRON TECHNOLOGY INC
  • US8528175B2 patent drawing
  • US8528175B2 patent drawing
  • US8528175B2 patent drawing

AI summary

Some embodiments include methods of forming capacitors. A metal oxide mixture may be formed over a first capacitor electrode. The metal oxide mixture may have a continuous concentration gradient of a second component relative to a first component. The continuous concentration gradient may correspond to a decreasing concentration of the second component as a distance from the first capacitor electrode increases. The first component may be selected from the group consisting of zirconium oxide, hafnium oxide and mixtures thereof; and the second component may be selected from the group consisting of niobium oxide, titanium oxide, strontium oxide and mixtures thereof. A second capacitor electrode may be formed over the first capacitor electrode. Some embodiments include capacitors that contain at least one metal oxide mixture having a continuous concentration gradient of the above-described second component relative to the above-described first component.