Thin Film Capacitor Dielectric Patch Taper Angle Breakdown Resistance
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Solution Overview
Problem
Thin film capacitors face dielectric breakdown due to mechanical stress and accumulated electric charge, which compromises their long-term reliability and durability.
Innovation Solution
Incorporating a dielectric patch member with a specific taper angle and area on the surface of the dielectric substance layer to control and concentrate electric charge, preventing rapid movement and accumulation that could lead to breakdown, along with a nucleus portion for enhanced formation and positioning, and varying relative permittivity to facilitate stress distribution.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of stationary object
If the thickness of the dielectric substance layer is reduced to reduce capacitor profile, then the profile is reduced, but the withstanding voltage and leakage characteristics deteriorate
Solution Approach 1:
The patent introduces a dielectric patch member with specific material composition and crystalline structure at a localized region within the dielectric substance layer. This patch member has different local properties (higher withstanding voltage and better leakage characteristics) compared to the surrounding dielectric material, thereby improving overall reliability without increasing the total thickness of the dielectric layer.
2Ease of operation
If the dielectric substance layer is subjected to mechanical deformation during use, then the piezoelectric properties are utilized, but mechanical stress accumulates and causes dielectric breakdown over time
Solution Approach 1:
The dielectric patch member acts as an intermediary stress-distributing element within the dielectric substance layer. When mechanical deformation occurs, the patch member with its different mechanical properties (modulus, hardness) redistributes the stress, preventing stress concentration that would lead to dielectric breakdown, while still allowing the piezoelectric effect to function.
Solution Approach 2:
The patent pre-introduces the dielectric patch member into the dielectric substance layer before the capacitor is put into service. This patch member serves as a preventive measure that cushions against future mechanical stress accumulation, thereby preventing dielectric breakdown before it can occur during long-term operation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The configuration effectively suppresses dielectric breakdown and maintains the properties of thin film capacitors over a long period, ensuring reliable performance.
Implementation Method 1
The dielectric patch member can function as a center for controlling (leaking, adjusting) charge or stress accumulated in the dielectric substance layer
Implementation Method 2
The electric charge concentrated in the dielectric patch member is released as interfacial current that is transmitted through an interface between the dielectric patch member and the dielectric substance layer
Implementation Method 3
the dielectric substance layer (dielectric material) of a capacitor has piezoelectric properties, and thus mechanical deformation occurs in the dielectric substance layer through the use of the element
Data Source
AI summary
A thin film capacitor includes a lower electrode layer, an upper electrode layer, and a dielectric substance layer provided between the lower electrode layer and the upper electrode layer. A dielectric patch member formed of a dielectric material is formed on a surface of the dielectric substance layer on an upper electrode layer side, a cross-sectional structure of the dielectric patch member has a taper angle of 1 to 25 degrees in a cross section perpendicular to the dielectric substance layer, the taper angle being an angle formed by (1) a tangential line tangent to an end portion of the dielectric patch member at a position that is 50% of a maximum height of the dielectric patch member and (2) a line being an interface between the dielectric substance layer and the upper electrode layer, and an area of the dielectric patch member is 100 to 900000 μm2.