Stacked Semiconductor Capacitor-Diode Layout for Plasma ESD Protection
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Solution Overview
Problem
Semiconductor devices face issues with burn-out and circuit shorting due to electrostatic discharge during plasma processes, such as plasma etch and bonding, which can damage components like capacitors and transistors, leading to performance degradation and reduced yield.
Innovation Solution
Incorporating additional discharge paths, including conductive vias and diode structures, to divert discharge currents away from sensitive components, thereby preventing damage and improving the semiconductor device's performance and yield.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional semiconductor fabrication processes are used without additional discharge paths, then the device structure remains simple, but electrostatic discharge during plasma processes causes burn-out and circuit shorting
Solution Approach 1:
The patent introduces conductive vias and diode structures as intermediary elements that provide controlled discharge paths. These intermediaries capture and redirect electrostatic discharge currents away from sensitive circuit components, preventing burn-out and shorting while maintaining overall device functionality
Solution Approach 2:
The patent segments the discharge current path by creating separate conductive via structures and diode elements that are distinct from the main circuitry. This segmentation allows discharge currents to be handled independently through dedicated paths rather than forcing them through sensitive circuit components
2Productivity
If minimum feature sizes are reduced to improve integration density, then more components can be integrated into a given area, but additional process problems arise including increased susceptibility to electrostatic discharge damage
Solution Approach 1:
The patent addresses electrostatic discharge protection by moving from a two-dimensional circuit plane to a three-dimensional structure with vertical conductive vias extending through multiple layers. This dimensional change creates dedicated discharge paths that do not occupy additional planar space, allowing high-density integration while providing robust ESD protection
Solution Approach 2:
The patent incorporates conductive vias and diode structures into the device architecture before plasma processing occurs. These pre-positioned discharge paths are ready to capture and redirect electrostatic discharge currents during subsequent plasma etch and bonding operations, preventing damage before it can occur to sensitive components
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The implementation of conductive vias and diode structures effectively reduces the risk of damage from electrostatic discharge, enhancing the performance and yield of semiconductor devices and allowing for easier adaptation to next-generation technologies.
Implementation Method 1
burn-out and circuit shorting due to electrostatic discharge during plasma processes
Data Source
AI summary
A semiconductor device and a method of forming the same are provided. The semiconductor device includes a first substrate, a capacitor within the first substrate, a diode structure within the first substrate adjacent the capacitor, and a first interconnect structure over the capacitor and the diode structure. A first conductive via of the first interconnect structure electrically couples the capacitor to the diode structure.