Capacitor Discharge Structure for Plasma-Induced Damage Protection

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Solution Overview

Problem

Plasma-induced charge during semiconductor device fabrication leads to degradation of electrical performance, necessitating a solution to prevent plasma-induced damage (PID).

Innovation Solution

A semiconductor device with a capacitor and a discharge structure connected to the upper electrode, designed to discharge plasma-induced charges to a substrate, thereby preventing damage to the dielectric layer and improving performance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If plasma processes are used for deposition or etching, then manufacturing capability is improved, but plasma-induced charge degrades electrical performance

Engineering Contradiction:
Improvemanufacturing capabilityVSAvoidelectrical performance
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

A discharge structure is introduced as an intermediary component between the plasma process and the capacitor. This discharge structure includes a discharge electrode that collects plasma-induced charges and discharges them to a reference potential, preventing charge accumulation that would otherwise degrade the dielectric layer and reduce electrical performance.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent converts the harmful plasma-induced charge into a beneficial effect by providing a controlled discharge path. The discharge structure safely dissipates the accumulated charge through a diode to a reference potential, transforming the harmful charge accumulation into a controlled discharge process that protects the capacitor while maintaining plasma process efficiency.

Inventive Principle:
Principle #22Blessing in disguise (Convert harm into benefit)

2Reliability

If discharge structure is added to prevent plasma-induced damage, then electrical performance is improved, but device complexity increases

Engineering Contradiction:
Improveelectrical performanceVSAvoidstructure complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The discharge structure is designed to serve multiple functions: it collects plasma-induced charges, provides a discharge path to reference potential, and protects the dielectric layer from charge accumulation damage. By consolidating these protective functions into a single integrated structure, the patent minimizes the increase in device complexity while maximizing the improvement in electrical performance.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The discharge structure effectively prevents plasma-induced damage, enhancing the semiconductor device's performance by safely dissipating charges induced during plasma processes.

Implementation Method 1

a discharge structure spaced apart from the capacitor, connected to the upper electrode of the capacitor and suitable for discharging, to the substrate, a charge induced from a plasma process for forming the upper electrode of the capacitor

Methodology Applied
Scientific EffectElectrostatic discharge: Electrostatic Discharge

Data Source

PatentUS12051689B2Semiconductor device and method for fabricating the same
Publication Date: 2024.07.30 SK HYNIX INC
  • US12051689B2 patent drawing
  • US12051689B2 patent drawing
  • US12051689B2 patent drawing

AI summary

A semiconductor device includes: a capacitor disposed over a substrate including a lower electrode, a dielectric layer, and an upper electrode; and a discharge structure spaced apart from the capacitor, connected to the upper electrode of the capacitor, and suitable for discharging, to the substrate, a charge induced from a plasma process for forming the upper electrode of the capacitor.