Capacitor with Doped Dielectric for Non-Uniform Thickness
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
In capacitors with non-uniform dielectric thickness, the electrostatic capacitance in the thick film portion is decreased, while the withstand voltage performance in the thin film portion is compromised.
Innovation Solution
The capacitor design includes a dielectric portion with a thick film portion having a higher relative permittivity than the thin film portion, achieved by doping the outermost dielectric layer with impurities like nitrogen, which increases the relative permittivity in the thick film portion without compromising the withstand voltage performance in the thin film portion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the average thickness of the dielectric portion is increased to ensure withstand voltage performance in the thin film portion, then the withstand voltage performance is maintained, but the electrostatic capacitance decreases in the thick film portion
Solution Approach 1:
The patent applies local quality by forming a doped dielectric layer with different properties in different regions. The doped dielectric layer has a higher relative permittivity than the undoped dielectric layer, and this doped layer is selectively formed in the thick film portion to increase capacitance without affecting the thin film portion's withstand voltage performance
Solution Approach 2:
The patent uses composite materials by combining doped and undoped dielectric layers. The doped dielectric layer (with higher relative permittivity) is formed in the thick film portion, while the undoped dielectric layer remains in the thin film portion, creating a composite structure that optimizes both capacitance and withstand voltage performance
2Reliability
If the thickness of the dielectric layer is increased in the thick film portion, then the withstand voltage performance is improved, but the electrostatic capacitance decreases
Solution Approach 1:
The patent changes the relative permittivity parameter by introducing a doped dielectric layer with higher relative permittivity than the undoped dielectric layer. This parameter change allows the thick film portion to achieve higher capacitance without increasing the physical thickness, thereby maintaining withstand voltage performance while improving capacitance
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively suppresses the decrease in electrostatic capacitance in the thick film portion while maintaining the withstand voltage performance in the thin film portion, ensuring optimal performance in capacitors with non-uniform dielectric thickness.
Implementation Method 1
doping the outermost dielectric layer with impurities like nitrogen, which increases the relative permittivity in the thick film portion
Data Source
AI summary
A capacitor that includes a substrate, a dielectric portion, and a conductor layer. The dielectric portion includes a thick film portion and a thin film portion. The thick film portion has a thickness larger than the average thickness of the dielectric portion in a direction perpendicular to the first main surface. The thin film portion has a thickness smaller than the average thickness of the dielectric portion in the direction perpendicular to the first main surface. The thick film portion has a larger relative permittivity than the thin film portion.