Capacitor Above Isolated Dummy Active Region

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Solution Overview

Problem

In semiconductor manufacturing, achieving sufficient capacitance density for capacitors on a limited substrate area is challenging due to the interference of signals from active elements, especially when capacitors are located above dummy active regions that are electrically continuous with active regions.

Innovation Solution

The capacitors are positioned above electrically isolated dummy active regions, which are subjected to the same manufacturing processes as active regions but do not function as active elements, allowing for uniform pressure and reduced signal interference, thereby enabling higher capacitance density without area limitations.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If the capacitor is located above the dummy active region to utilize the limited substrate area, then the capacitance density increases, but the capacitor becomes susceptible to signal interference from the active region

Engineering Contradiction:
Improvecapacitance densityVSAvoidsignal interference
Core Design Contradiction:
Quantity of substanceVSObject-affected harmful factors

Solution Approach 1:

The substrate is divided into distinct active regions and dummy active regions that are electrically isolated from each other. The capacitor is specifically positioned above the dummy active region, which is segmented and isolated by insulating structures (such as trench isolations or insulating films) to prevent signal interference while maintaining close proximity for efficient space utilization.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

An insulating structure (intermediary) is introduced between the active region and the dummy active region where the capacitor is located. This intermediary barrier (such as a trench filled with insulating material or an insulating film) blocks the harmful signal interference from the active region while allowing the capacitor to remain positioned above the dummy active region for high capacitance density.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Object-affected harmful factors

If the capacitor is positioned away from the dummy active region to reduce signal interference, then the signal interference decreases, but the capacitance density becomes insufficient due to limited substrate area

Engineering Contradiction:
Improvesignal interferenceVSAvoidcapacitance density
Core Design Contradiction:
Object-affected harmful factorsVSQuantity of substance

Solution Approach 1:

The dummy active region is segmented and electrically isolated from the active region through insulating structures. This segmentation allows the capacitor to be positioned directly above the dummy active region without being affected by signals from the active region, thereby achieving both high capacitance density and reduced signal interference within the limited substrate area.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The dummy active region serves multiple functions: it maintains uniform pressure during manufacturing processes (as a dummy structure) and simultaneously provides a location for the capacitor to achieve high capacitance density. The insulating structures enable this multi-functionality by electrically isolating the dummy active region while maintaining its structural role.

Inventive Principle:
Principle #6Universality (Multi-functionality)

3Manufacturing precision

If the dummy active region is provided in a prescribed proportion outside the active region to ensure uniform pressure during manufacturing, then the manufacturing process quality improves, but the available area for capacitor placement is reduced

Engineering Contradiction:
Improvepressure uniformityVSAvoidavailable area for capacitor
Core Design Contradiction:
Manufacturing precisionVSArea of stationary object

Solution Approach 1:

The dummy active region is designed to serve dual purposes: ensuring uniform pressure during manufacturing processes (by matching the structural properties of the active region) and providing a dedicated space for the capacitor. By electrically isolating the dummy active region through insulating structures, the patent enables this multi-functionality without compromising either manufacturing quality or capacitor placement area.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Solution Approach 2:

The capacitor is positioned in the vertical dimension above the dummy active region rather than expanding the horizontal substrate area. This dimensional change allows the dummy active region to fulfill its pressure-uniformity function while simultaneously housing the capacitor vertically, thereby maximizing space utilization without reducing the available substrate area.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration allows for a 20% higher capacitance density compared to traditional designs, as the capacitors are less susceptible to signal interference, effectively utilizing the space above the dummy active regions for charge accumulation.

Implementation Method 1

a capacitor includes a substrate, a first electrode, a second electrode, and a first dielectric portion

Methodology Applied
Scientific EffectCapacitance: Capacitance

Implementation Method 2

a first dielectric portion is provided between the first electrode and the second electrode

Methodology Applied
Scientific EffectDielectric: Dielectric

Data Source

PatentUS8324710B2Capacitor, integrated device, radio frequency switching device, and electronic apparatus
Publication Date: 2012.12.04 KK TOSHIBA
  • US8324710B2 patent drawing
  • US8324710B2 patent drawing
  • US8324710B2 patent drawing

AI summary

According to one embodiment, a capacitor includes a substrate, a first electrode, a second electrode, and a first dielectric portion. The substrate includes an insulating layer and a semiconductor layer provided on the insulating layer. The semiconductor layer includes a dummy active region electrically isolated from an active region including an active element. The first electrode and the second electrode are located to oppose each other above the dummy active region. The first dielectric portion is provided between the first electrode and the second electrode.