Capacitor Electrode Groove Core Support Pattern
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Highly integrated semiconductor devices require increased capacitance in limited areas, which is challenging due to the limitations in the surface area of electrodes and dielectric films, necessitating innovative structures and materials to enhance capacitance without compromising the stability of the electrodes.
Innovation Solution
The capacitor design includes a lower electrode with a conductive pattern and a core support pattern that increases the surface area by forming a cylindrical shape with a groove region, filled by a dielectric film and an upper electrode, which also incorporates a barrier pattern to prevent metal diffusion and ensure mechanical stability, thereby enhancing capacitance while maintaining structural integrity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the surface area of the lower electrode is increased by forming a three-dimensional structure, then the capacitance is improved, but the structural stability deteriorates due to electrode collapse or bending
Solution Approach 1:
The lower electrode is divided into multiple segments: an outer conductive pattern and an inner core support pattern. The core support pattern is segmented into multiple regions (first, second, third core support patterns) that are positioned at different heights and provide distributed support to prevent collapse while maintaining the three-dimensional structure's stability.
Solution Approach 2:
The capacitor employs a composite structure combining conductive materials (for electrodes) with dielectric materials (for insulation and capacitance). The lower electrode combines conductive patterns with core support patterns made of different materials to achieve both electrical functionality and mechanical stability in the three-dimensional configuration.
2Quantity of substance
If the surface area of the lower electrode is increased by forming a three-dimensional structure, then the capacitance is improved, but the device complexity increases
Solution Approach 1:
The core support pattern is nested within the groove region defined by the conductive pattern. Multiple core support patterns are nested at different levels, with the third core support pattern positioned in a groove of the second conductive pattern, creating a nested configuration that increases surface area while following a systematic design approach.
Solution Approach 2:
The lower electrode transitions from a two-dimensional planar structure to a three-dimensional structure by forming grooves and positioning core support patterns at different heights. This dimensional change increases the effective surface area available for capacitance without proportionally increasing the footprint area.
3Quantity of substance
If the equivalent oxide thickness of the dielectric film is reduced, then the capacitance is improved, but the manufacturing precision requirements increase
Solution Approach 1:
Instead of relying solely on reducing dielectric film thickness, the invention changes the geometric parameters of the electrode structure by creating three-dimensional configurations with grooves and multiple levels. This approach increases capacitance through volume and surface area expansion rather than through extreme thinning of the dielectric layer, thereby reducing manufacturing precision requirements.
Data Source
AI summary
A capacitor of semiconductor device is provided including a lower electrode on a semiconductor substrate; a dielectric film covering a surface of the lower electrode; and an upper electrode covering the dielectric film. The lower electrode includes a first conductive pattern having a groove region defined by a bottom portion and a sidewall portion; and a first core support pattern disposed in the groove region of the first conductive pattern and exposing a portion of inner sidewall of the first conductive pattern. Related methods are also provided herein.