Semiconductor Capacitor Electrode Segmentation for Impurity Blocking
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Solution Overview
Problem
The capacitance of semiconductor capacitors can be compromised due to the penetration of impurities like hydrogen ions into the dielectric film, leading to deteriorated characteristics, particularly in DRAM devices.
Innovation Solution
A semiconductor device design featuring vertical cylindrical lower capacitor electrodes with a dielectric layer and an upper electrode composed of multiple semiconductor compound layers with varying crystallinity and composition ratios, along with a support structure, to create a hydrogen-blocking structure that prevents impurity penetration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a wide variety of studies are conducted to increase capacitor capacity (e.g., increasing aspect ratio, using high-k dielectric film), then the capacitance of the capacitor is improved, but impurities such as hydrogen ions may penetrate into the dielectric film causing deteriorated characteristics
Solution Approach 1:
The upper electrode is divided into multiple portions (first portion, second portion, third portion) with different materials and functions. The first portion contacts the dielectric layer directly, while the second and third portions form a protective structure around it. This segmentation allows different regions to perform specialized functions: the first portion maintains electrical contact while the outer portions block impurity penetration.
Solution Approach 2:
The upper electrode uses a composite structure with at least two different materials. The first material (in the first portion) provides good electrical contact with the dielectric layer, while the second material (in the second and third portions) provides superior impurity blocking capability. This composite approach combines the advantages of different materials to simultaneously achieve good electrical contact and effective impurity protection.
2Device complexity
If the upper electrode is formed with a single material, then the device structure is simple, but it cannot effectively prevent impurity penetration while maintaining good electrical contact
Solution Approach 1:
The upper electrode is divided into multiple portions (first portion, second portion, third portion) with different materials and functions. The first portion contacts the dielectric layer directly, while the second and third portions form a protective structure around it. This segmentation allows different regions to perform specialized functions: the first portion maintains electrical contact while the outer portions block impurity penetration.
Solution Approach 2:
The upper electrode uses a composite structure with at least two different materials. The first material (in the first portion) provides good electrical contact with the dielectric layer, while the second material (in the second and third portions) provides superior impurity blocking capability. This composite approach combines the advantages of different materials to simultaneously achieve good electrical contact and effective impurity protection.
Data Source
AI summary
Provided are a semiconductor device and a fabricating method thereof. The semiconductor device includes a storage electrode having a cylinder shape, a dielectric film formed on the storage electrode, and a plate electrode formed on the dielectric film, wherein the plate electrode includes a first semiconductor compound layer and a second semiconductor compound layer sequentially stacked one on the other, and the first semiconductor compound layer has a crystallinity different from that of the second semiconductor compound layer.