Capacitor Electrode Stabilization via Sidewall Insulator Coating

Resolve Bottlenecks,
Find Innovative SolutionsGenerate Solutions

Solution Overview

Problem

The increasing density of integrated circuits poses a challenge in maintaining high storage capacitance due to the reduction in capacitor area, leading to taller and narrower capacitor electrodes that are prone to toppling during fabrication and processing.

Innovation Solution

The method involves forming capacitor and antifuse openings in a semiconductive or conductive support material, followed by the deposition of an insulator along the sidewalls, and the formation of capacitor and antifuse electrodes with dielectric layers, which helps stabilize the electrodes and increase capacitance by exposing outer sidewall surfaces.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If capacitor area is reduced to increase integrated circuit density, then circuit density is improved, but storage capacitance deteriorates

Engineering Contradiction:

Improveintegrated circuit densityVSAvoidstorage capacitance

Core Design Contradiction:

ProductivityVSQuantity of substance

Solution Approach 1:

The patent transitions from horizontal capacitor expansion to vertical capacitor development by forming deep openings (500nm-2µm) into the support material and creating tall capacitor electrodes that extend vertically. This dimensional change allows capacitance to be maintained or increased despite reduced planar area, directly resolving the contradiction between circuit density and storage capacitance.

Inventive Principle:

Principle #17Another dimension (Dimensionality change)

2Quantity of substance

If capacitor vertical dimension is increased to maintain capacitance, then storage capacitance is improved, but electrode stability deteriorates

Engineering Contradiction:

Improvestorage capacitanceVSAvoidelectrode stability

Core Design Contradiction:

Quantity of substanceVSStability of the object's composition

Solution Approach 1:

The patent applies a protective coating material (such as silicon nitride or silicon oxide) to the outer sidewalls of capacitor electrodes before potential damage can occur. This pre-applied protective layer cushions the tall, narrow electrodes against mechanical stress during etching, transport, and subsequent processing steps, preventing toppling while allowing the electrodes to maintain their tall vertical structure for adequate capacitance.

Inventive Principle:

Principle #11Beforehand cushioning (Prior cushioning)

Solution Approach 2:

The patent creates a composite structure where capacitor electrodes are formed within openings in a support material, with protective coating materials applied to the electrode sidewalls. This composite construction combines the capacitive function of the electrode material with the mechanical protection of the coating material, enabling tall vertical electrodes to maintain both their capacitance function and structural stability.

Inventive Principle:

Principle #40Composite materials

3Quantity of substance

If deep openings are etched to form capacitor electrodes, then storage capacitance is improved through increased electrode area, but manufacturing difficulty increases

Engineering Contradiction:

Improvestorage capacitanceVSAvoidetching difficulty

Core Design Contradiction:

Quantity of substanceVSEase of manufacture

Solution Approach 1:

The patent introduces a protective coating material as an intermediary layer during the etching process. This coating is applied to the sidewalls of openings before the capacitor electrode formation, serving as a mediator that protects the support material from excessive etching while allowing controlled formation of deep openings. This intermediary layer enables the manufacturing of deep capacitor structures without the full complexity of etching through the entire support material thickness.

Inventive Principle:

Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach stabilizes the capacitor electrodes, prevents toppling, and enhances capacitance by allowing the exposure of outer sidewall surfaces, thereby addressing the issue of reduced capacitance in densely packed integrated circuits.

Implementation Method 1

an insulator is deposited along the semiconductive and/or conductive opening sidewalls

Methodology Applied

Scientific EffectDeposition: Deposition (physical)

Implementation Method 2

A pair of capacitor electrodes having capacitor dielectric there-between is formed within the respective openings

Methodology Applied

Scientific EffectCapacitance: Capacitance

Data Source

PatentUS9076680B2Integrated circuitry, methods of forming capacitors, and methods of forming integrated circuitry comprising an array of capacitors and circuitry peripheral to the array

Publication Date: 2015.07.07 MICRON TECHNOLOGY INC

AI summary

A method of forming capacitors includes providing a support material over a substrate. The support material is at least one of semiconductive or conductive. Openings are formed into the support material. The openings include at least one of semiconductive or conductive sidewalls. An insulator is deposited along the semiconductive and/or conductive opening sidewalls. A pair of capacitor electrodes having capacitor dielectric there-between is formed within the respective openings laterally inward of the deposited insulator. One of the pair of capacitor electrodes within the respective openings is laterally adjacent the deposited insulator. Other aspects are disclosed, including integrated circuitry independent of method of manufacture.