Capacitor Electrode Stabilization via Self-Assembly Collar

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Solution Overview

Problem

The increasing density of integrated circuits poses challenges in maintaining high storage capacitance due to the reduction in capacitor area, leading to deep capacitor electrodes with large aspect ratios that are prone to toppling during etching and subsequent processes, requiring structural support to prevent electrode instability.

Innovation Solution

A capacitor structure is formed with a substrate having capacitor electrodes within an insulative retaining material, where a collar layer with an unguided, random self-assembly pattern is created using a self-assembled polymer layer to interconnect the electrodes and expose the underlying material, providing structural support and increasing capacitance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If capacitor area is reduced to increase integrated circuit density, then circuit density is improved, but capacitor storage capacitance deteriorates

Engineering Contradiction:

Improveintegrated circuit densityVSAvoidcapacitor storage capacitance

Core Design Contradiction:

ProductivityVSQuantity of substance

Solution Approach 1:

The invention transitions from horizontal capacitor expansion to vertical capacitor development by forming deep electrode openings with high aspect ratios and filling them with conductive material, thereby maintaining capacitance in reduced planar area through increased vertical dimension

Inventive Principle:

Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The collar layer structure is formed within and around the deep electrode openings, nesting the support structure directly within the capacitor electrode geometry to provide mechanical stability without occupying additional planar space

Inventive Principle:

Principle #7Nested doll (Nesting)

2Quantity of substance

If capacitor electrodes are made taller to maintain capacitance in reduced area, then storage capacitance is improved, but electrode stability deteriorates

Engineering Contradiction:

Improvestorage capacitanceVSAvoidelectrode stability

Core Design Contradiction:

Quantity of substanceVSStability of the object's composition

Solution Approach 1:

The collar layer is formed prior to the etching process that exposes outer sidewall surfaces, providing pre-established mechanical support to prevent electrode toppling during subsequent processing steps

Inventive Principle:

Principle #10Preliminary action

Solution Approach 2:

The collar layer acts as an intermediary structural element between the deep electrode openings and the surrounding matrix, providing mechanical coupling and stability to prevent electrode toppling during processing

Inventive Principle:

Principle #24Intermediary (Mediator)

3Quantity of substance

If outer sidewall surfaces are exposed to increase electrode area, then capacitance is improved, but electrode toppling occurs

Engineering Contradiction:

ImprovecapacitanceVSAvoidelectrode toppling

Core Design Contradiction:

Quantity of substanceVSStability of the object's composition

Solution Approach 1:

The collar layer is formed in advance before the etching process that exposes outer sidewall surfaces, ensuring mechanical support is in place before the electrode becomes vulnerable to toppling

Inventive Principle:

Principle #10Preliminary action

Solution Approach 2:

The collar layer provides preemptive mechanical reinforcement to the electrode structure, cushioning against the toppling force that will occur during subsequent etching and processing operations

Inventive Principle:

Principle #11Beforehand cushioning (Prior cushioning)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution effectively stabilizes capacitor electrodes by creating a collar layer structure that interconnects them and exposes the insulative retaining material, preventing toppling and enhancing capacitance, thus addressing the challenge of maintaining high storage capacitance in densely packed integrated circuits.

Implementation Method 1

the self-assembled polymer layer has a first domain phase-separated from a second domain

Methodology Applied

Scientific EffectPhase separation: Phase Change

Implementation Method 2

a collar layer structure in contact with the plurality of capacitor electrodes, wherein the collar layer structure interconnects the plurality of capacitor electrodes and exposes the underlying insulative retaining material through openings having an unguided, random self-assembly pattern

Methodology Applied

Scientific EffectSelf-assembly: Self-Assembly

Data Source

PatentUS9385129B2Method of forming a memory capacitor structure using a self-assembly pattern

Publication Date: 2016.07.05 TOKYO ELECTRON LTD

AI summary

A capacitor structure and method of forming thereof on a substrate is described. The capacitor structure includes a substrate having a plurality of capacitor electrodes formed within an insulative retaining material, and a collar layer structure in contact with the plurality of capacitor electrodes, wherein the collar layer structure interconnects the plurality of capacitor electrodes and exposes the underlying insulative retaining material through openings having an unguided, random self-assembly pattern. Furthermore, the insulative retaining material may be removed from the capacitor structure. The method includes using a self-assembly process to form the interconnecting collar layer structure.