Thin Film Capacitor Electrode Surface Area Ratio for Heat Dissipation
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Solution Overview
Problem
Conventional semiconductor devices with embedded thin film capacitors face inadequate heat radiation efficiency, leading to insufficient heat dissipation from semiconductor elements.
Innovation Solution
A thin film capacitor with a specific surface area ratio (S/S0) of 1.01 to 5.00 and ten-point average roughness of 0.02 to 2.00 μm is embedded in a support substrate, allowing efficient heat dissipation from semiconductor elements while minimizing void generation, which reduces heat conductivity loss.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If the surface area of the first electrode layer is increased to improve heat dissipation, then heat radiation efficiency is improved, but voids are generated near the lower surface of the first electrode layer inside the support substrate
Solution Approach 1:
The patent applies parameter changes by optimizing the surface area ratio (S/S0) of the first electrode layer to a specific range (1.01 to 5.00). This quantitative parameter adjustment enables sufficient heat dissipation surface area while preventing excessive expansion that would cause void formation during embedding, thus resolving the contradiction between heat dissipation efficiency and void generation
Solution Approach 2:
The patent applies local quality by controlling the surface roughness (Rz: 0.02 to 2.00 μm) of the first electrode layer. This localized surface characteristic optimization enhances heat transfer efficiency at the electrode-substrate interface without causing excessive material displacement that would lead to voids, thereby balancing heat dissipation performance with structural integrity
2Temperature
If conventional heat radiation mechanisms are adopted, then some heat dissipation is achieved, but radiation efficiency is insufficient
Solution Approach 1:
The patent fundamentally changes the heat dissipation approach by transforming the first electrode layer into a heat radiation functional layer with specific surface characteristics (S/S0 ratio and surface roughness). This parameter-driven transformation enables the electrode layer to actively radiate heat efficiently, achieving superior heat radiation efficiency compared to conventional passive heat dissipation mechanisms
3Temperature
If the surface area ratio S/S0 is increased beyond 5.00, then heat dissipation is improved, but voids are generated near the lower surface of the first electrode layer
Solution Approach 1:
The patent establishes an optimal parameter range (S/S0: 1.01 to 5.00) that balances heat dissipation efficiency with structural integrity. By constraining the surface area ratio within this specific range, the patent prevents excessive electrode layer expansion that would displace embedding material and create voids, while still providing sufficient surface area for effective heat dissipation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The semiconductor device effectively dissipates heat from semiconductor elements, maintaining stable operation temperatures and preventing short-circuit defects without a complex structure, by utilizing a thin film capacitor with optimized surface area and roughness.
Implementation Method 1
heat conductivity λ of the first electrode layer is 90 W/(m·K) or higher
Implementation Method 2
heat radiation through the support substrate can be promoted by means of the thin film capacitor
Data Source
AI summary
The present invention provides a thin film capacitor including a first electrode layer, a second electrode layer, and a dielectric layer provided between the first electrode layer and the second electrode layer, wherein a ratio (S/S0) of a surface area S of a surface of the first electrode layer on an opposite side to the dielectric layer to a projected area S0 in a thickness direction of the first electrode layer is 1.01 to 5.00.