Capacitor Fabrication via Thermal Annealing for Uniform Impurity Diffusion
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Solution Overview
Problem
In semiconductor devices, the miniaturization of capacitors leads to a decrease in capacitance due to the inability of impurity elements like boron to reach the bottom of trenches, resulting in depletion of polysilicon films and ineffective conductivity, and thermal annealing processes cause variations in resistance values for resistor patterns.
Innovation Solution
A method involving thermal annealing to dope impurity elements into semiconductor films, ensuring high concentration levels up to the trench bottom, and introducing a second impurity element after annealing to stabilize resistor patterns, thereby compensating for capacitance loss and reducing resistance variations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If impurity elements are introduced into polysilicon film to increase conductivity, then capacitance increases, but impurity elements cannot reach the bottom of trenches in miniaturized capacitors, resulting in depletion and ineffective conductivity
Solution Approach 1:
The patent applies preliminary action by performing thermal annealing before impurity element introduction. The annealing process pre-heats the polysilicon film and creates conditions favorable for subsequent impurity diffusion, ensuring that impurity elements can reach the trench bottom effectively. This preliminary thermal treatment enables uniform impurity distribution throughout the miniaturized capacitor structure.
Solution Approach 2:
The patent changes physical parameters by controlling thermal annealing temperature and duration, as well as impurity introduction conditions. By optimizing these parameters, the process ensures that impurity elements diffuse uniformly throughout the polysilicon film including the trench bottom, achieving both high conductivity and uniform distribution in miniaturized capacitors.
2Reliability
If thermal annealing is performed to dope impurity elements, then capacitance increases, but resistance values of resistor patterns vary
Solution Approach 1:
The patent applies preliminary action by performing thermal annealing before impurity element introduction. The annealing process pre-heats the polysilicon film and creates conditions favorable for subsequent impurity diffusion, ensuring that impurity elements can reach the trench bottom effectively. This preliminary thermal treatment enables uniform impurity distribution throughout the miniaturized capacitor structure.
Solution Approach 2:
The patent changes physical parameters by controlling thermal annealing temperature and duration, as well as impurity introduction conditions. By optimizing these parameters, the process ensures that impurity elements diffuse uniformly throughout the polysilicon film including the trench bottom, achieving both high conductivity and uniform distribution in miniaturized capacitors.
3Productivity
If capacitor size is reduced for miniaturization, then device density increases, but capacitance values decrease due to impurity depletion
Solution Approach 1:
The patent applies preliminary action by performing thermal annealing before impurity element introduction. The annealing process pre-heats the polysilicon film and creates conditions favorable for subsequent impurity diffusion, ensuring that impurity elements can reach the trench bottom effectively. This preliminary thermal treatment enables uniform impurity distribution throughout the miniaturized capacitor structure.
Solution Approach 2:
The patent changes physical parameters by controlling thermal annealing temperature and duration, as well as impurity introduction conditions. By optimizing these parameters, the process ensures that impurity elements diffuse uniformly throughout the polysilicon film including the trench bottom, achieving both high conductivity and uniform distribution in miniaturized capacitors.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively increases capacitance values by ensuring uniform conductivity in capacitors and stabilizes resistance values in resistor patterns, addressing the challenges of miniaturization and thermal annealing effects.
Implementation Method 1
introducing a first impurity element into the semiconductor film over the first trench, annealing the semiconductor substrate
Implementation Method 2
annealing the semiconductor substrate, and then introducing a second impurity element in said resistor
Data Source
AI summary
A method of manufacturing a semiconductor device includes forming a first trench in a capacitor device region of a semiconductor substrate, forming a capacitor insulation film over a sidewall surface of the first trench, forming a semiconductor film to cover the first trench, a resistor device region of the semiconductor substrate and a logic device region of the semiconductor substrate, introducing a first impurity element into the semiconductor film formed over the first trench, patterning the semiconductor film to form a top electrode in the capacitor device region, a resistor in the resistor device region and a gate electrode in the logic device region, annealing the semiconductor substrate, and introducing a second impurity element in the resistor.