Semiconductor Capacitor Fabrication via Selective Dielectric Patterning
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Solution Overview
Problem
Semiconductor devices equipped with various capacitors face limitations in diversifying processing factors due to the need for a single manufacturing process, restricting the formation of capacitors with different electrical conditions on the same layer.
Innovation Solution
A method of fabricating semiconductor devices with capacitors that satisfy different electrical conditions on the same layer by using a substrate with distinct regions, where dielectric films and electrode layers are selectively formed and patterned to create storage and higher voltage resistance capacitors without increasing the number of processing steps, utilizing materials like SiO2, Ta2O5, Al2O3, and HfO2 for dielectric films and polysilicon for electrodes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a single manufacturing process is used for all capacitors on a substrate, then manufacturing cost is reduced, but the ability to diversify processing factors (electrode types, dielectric film thicknesses) is restricted
Solution Approach 1:
The substrate is divided into multiple capacitor regions (first capacitor region and second capacitor region), allowing different processing factors to be applied to each region independently. This segmentation enables formation of capacitors with different dielectric film thicknesses and electrode configurations while using a unified manufacturing process, thus resolving the contradiction between manufacturing efficiency and processing versatility.
Solution Approach 2:
Different regions of the substrate are assigned different local qualities (processing factors) such as varying dielectric film thicknesses and electrode types. The first capacitor region receives a first dielectric film with specific thickness characteristics while the second capacitor region receives a second dielectric film with different thickness characteristics, enabling tailored capacitor performance in each region without requiring separate manufacturing processes.
2Reliability
If different dielectric film thicknesses are used for different capacitors, then electrical characteristics are optimized, but the number of processing steps increases
Solution Approach 1:
A thickness adjustment layer is formed preliminarily across the entire substrate before final dielectric film deposition. This preliminary structure allows subsequent selective removal ( patterning) to create regions with different effective dielectric thicknesses. By establishing the thickness variation through a preliminary uniform layer followed by selective removal, the process avoids the complexity of depositing multiple dielectric layers with different thicknesses, thus optimizing electrical characteristics without significantly increasing processing steps.
Solution Approach 2:
The dielectric film thickness parameter is varied across different capacitor regions by selectively removing portions of the thickness adjustment layer. This parameter change approach allows the same dielectric material to be used throughout, but with different effective thicknesses in different regions, achieving optimized electrical characteristics for each capacitor type while maintaining process simplicity.
Data Source
AI summary
Provided are a method of fabricating a semiconductor device having different kinds of capacitors, and a semiconductor device formed using the same. In a fabrication process, after preparing a substrate including a storage capacitor region and a higher voltage resistance capacitor region, a lower electrode layer may be formed on the storage capacitor region and the higher voltage resistance capacitor region. A first dielectric film may be formed on the lower electrode layer, and the first dielectric film of the storage capacitor region may be selectively removed to expose the lower electrode layer of the storage capacitor region. After forming a second dielectric film on the first dielectric film and the exposed lower electrode layer of the storage capacitor region, an upper electrode layer may be formed on the second dielectric film.