High Voltage Isolation Capacitor Floating Plate Field Redistribution

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Solution Overview

Problem

High voltage isolation capacitors are limited by high electric fields at their bottom edges, leading to dielectric breakdown and the need for oversized capacitors to prevent this, which occupies excessive microelectronic device area.

Innovation Solution

Incorporating a conductive floating plate between the high and low voltage nodes, with dielectrics on either side, to modify electric field distribution and reduce peak electric field strengths near the capacitor edges, allowing for a more compact design without compromising voltage rating.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If high voltage isolation capacitors are designed with standard structure, then voltage rating is limited by dielectric breakdown at bottom edges, but increasing capacitor size to prevent breakdown occupies excessive microelectronic device area

Engineering Contradiction:
Improvevoltage ratingVSAvoidcapacitor area
Core Design Contradiction:
ReliabilityVSArea of stationary object

Solution Approach 1:

A conductive floating plate is introduced as an intermediary element between the high voltage node and the bottom dielectric layer. This floating plate acts as a mediator that redistributes the electric field, preventing direct high field concentration at the bottom edges of the high voltage isolation capacitor metal, thereby enabling higher voltage ratings without increasing capacitor area.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent applies different dielectric materials with different breakdown voltages in different regions of the capacitor structure. Specifically, a first dielectric material is used in regions experiencing higher electric field stress, while a second dielectric material is used in other regions. This local differentiation of dielectric properties allows the capacitor to achieve higher overall voltage ratings without increasing area.

Inventive Principle:
Principle #3Local quality

2Area of stationary object

If capacitor size is reduced to conserve area, then capacitance density increases, but electric field concentration at edges causes dielectric breakdown

Engineering Contradiction:
Improvecapacitor areaVSAvoidelectric field concentration
Core Design Contradiction:
Area of stationary objectVSObject-affected harmful factors

Solution Approach 1:

The conductive floating plate serves as an intermediary that intercepts and redistributes electric field lines before they can concentrate at the bottom edges of the high voltage metal. This mediator structure enables compact capacitor design by preventing the harmful electric field concentration that would otherwise occur in smaller capacitors.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent changes the electrical parameters of the capacitor structure by introducing the floating plate and using multiple dielectric materials with different properties. These parameter changes modify the electric field distribution throughout the structure, reducing peak field concentrations and enabling smaller capacitor designs that avoid dielectric breakdown.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This design reduces electric field levels near the bottom corners of high voltage nodes, enabling higher capacitance density and area conservation in microelectronic devices without the need for oversized capacitors, thus enhancing operational efficiency and reducing device size.

Implementation Method 1

a first dielectric between the high and low voltage nodes, a second dielectric disposed between the first conductive plate and the high voltage node

Methodology Applied
Scientific EffectDielectric insulation: Dielectric

Data Source

PatentUS11222945B2High voltage isolation structure and method
Publication Date: 2022.01.11 TEXAS INSTRUMENTS INC
  • US11222945B2 patent drawing
  • US11222945B2 patent drawing
  • US11222945B2 patent drawing

AI summary

Described examples include a microelectronic device with a high voltage capacitor that includes a high voltage node, a low voltage node, a first dielectric disposed between the low voltage node and the high voltage node, a first conductive plate disposed between the first dielectric and the high voltage node, and a second dielectric disposed between the first conductive plate and the high voltage node.