Capacitor Hard Mask Etching That Protects Bottom Electrodes
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Solution Overview
Problem
In the manufacturing process of capacitors for miniaturized integrated circuits, the loss of bottom electrode material leads to compromised electrical performance and yield due to chemical reactions during etching.
Innovation Solution
A method involving the use of nitrogen and/or hydrogen atomic-containing gases for etching a hard mask layer to form openings, preventing chemical reactions with the bottom electrode material and preserving its integrity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional etching gases are used to etch the hard mask layer, then the etching process can proceed efficiently, but the bottom electrode material reacts with the etching gas causing material loss and degraded electrical performance
Solution Approach 1:
The patent uses a nitrogen-based or hydrogen-based atomic-containing gas as the etching gas to create an inert etching environment. This inert atmosphere prevents harmful chemical reactions between the etching gas and the bottom electrode material (which contains tungsten, cobalt, or platinum), thereby avoiding material loss and maintaining electrical performance while still achieving effective etching of the hard mask layer.
2Productivity
If the critical dimension of the capacitor is reduced to achieve higher integration density, then more capacitors can be integrated, but the bottom electrode material is more prone to loss during the etching process
Solution Approach 1:
By using nitrogen-based or hydrogen-based atomic-containing gases as the etching gas, the patent creates a chemically inert environment that protects the bottom electrode material from reactions during etching. This is particularly important for miniaturized capacitors where even small amounts of material loss can significantly impact yield and electrical performance, thus enabling high integration density while maintaining manufacturing precision.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach maintains the integrity of the bottom electrode, enhancing the capacitive storage capacity and electrical performance of the capacitor structure.
Implementation Method 1
the first gas comprises a nitrogen atomic-containing and/or hydrogen atomic-containing gas, to avoid a combination reaction between the first gas and a material of the bottom electrode
Implementation Method 2
partially etching the hard mask layer through an etching gas, to form a plurality of first openings in the hard mask layer
Data Source
AI summary
The present disclosure provides a method of manufacturing a semiconductor structure and a semiconductor structure. The method of manufacturing the semiconductor structure includes: providing an initial structure, where the initial structure includes a laminated structure and a plurality of capacitor holes formed in the laminated structure, and a bottom electrode is formed in each of the capacitor holes; forming a hard mask layer, where the hard mask layer covers a top surface of the initial structure; and partially etching the hard mask layer through an etching gas, to form a plurality of first opening, where the etching gas includes a first gas, and the first gas includes a nitrogen atomic-containing and/or hydrogen atomic-containing gas, to avoid a combination reaction between the first gas and a material of the bottom electrode.