Capacitor with Honeycomb Dielectric for High Density

The patent replaces mechanical micromachining processes with electrochemical anodization to form the dielectric layer and electrode structures. This substitution enables precise control of hole dimensions and spacing without the limitations of conventional micromachining, resolving the contradiction between increasing capacitance and maintaining ease of manufacture.

The patent changes the physical and chemical parameters of the system by using anodization to create porous structures with controlled pore size, shape, and distribution. This allows precise control of electrode geometry and dielectric properties, enabling increased capacitance while maintaining manufacturing simplicity through electrochemical parameter control rather than mechanical processing.

The patent replaces mechanical deposition and etching processes with electrochemical anodization and electrodeposition, which provide superior control over film thickness uniformity even at increased heights. The electrochemical processes self-regulate to maintain uniformity, resolving the contradiction between increased capacitance density and maintained manufacturing precision.

The anodization process is self-limiting and self-regulating, automatically controlling the growth of the dielectric layer and electrode structures to maintain uniform thickness and geometry. This self-service mechanism ensures that even as structures increase in height for higher capacitance, the uniformity of film thickness is automatically maintained without requiring additional precision control mechanisms.

The patent replaces mechanical etching with electrochemical anodization followed by electrodeposition, enabling the formation of high aspect ratio electrode structures. The electrochemical processes can create vertical walls and maintain structural integrity at much higher aspect ratios than mechanical etching, while keeping the manufacturing process relatively simple through sequential electrochemical steps.

The patent changes the manufacturing approach from mechanical parameter control to electrochemical parameter control, using voltage, current density, and time parameters to precisely control electrode geometry. This enables achievement of high aspect ratios by adjusting electrochemical parameters rather than being constrained by mechanical etching limitations, while maintaining process simplicity through fewer process steps.

The patent transitions from planar electrode arrangements to three-dimensional porous structures with vertical electrode bodies extending through the dielectric layer. This dimensional change from 2D to 3D architecture reduces the current path length and inductance while maintaining manufacturing simplicity through the self-organizing nature of the anodization and electrodeposition processes.

The patent segments the electrode structure into numerous small, distributed electrode bodies within the porous dielectric, rather than using single large planar electrodes. This segmentation creates multiple parallel current paths that reduce equivalent series inductance, while the segmented structure is naturally formed through the anodization process that creates uniformly distributed pores throughout the dielectric layer.