Capacitor Interface Structure for Low-Leakage Integrated Circuits

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Solution Overview

Problem

Existing capacitors in integrated circuits face challenges in minimizing leakage current, especially as devices are miniaturized, leading to asymmetrical I-V characteristics and reduced reliability due to varying electrical energy barriers between electrodes.

Innovation Solution

Incorporating an interfacial layer between the dielectric layer and the second electrode in the capacitor structure, which can be an insulating or conductive layer with specific metal compositions, to increase the electrical energy barrier and achieve symmetrical I-V characteristics by matching the energy barrier with that of the first electrode, thereby reducing leakage current.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If an interfacial layer is added between the dielectric layer and the second electrode, then leakage current is reduced and electrical characteristics are improved, but device complexity increases due to additional fabrication steps

Engineering Contradiction:
Improvecapacitor reliabilityVSAvoidcapacitor structure complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

An interfacial layer is introduced between the dielectric layer and the second electrode to act as an intermediary that increases the electrical energy barrier. This mediator layer prevents direct contact between the dielectric and electrode, thereby reducing leakage current and improving capacitor reliability by creating a more stable energy barrier interface.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The electrical energy barrier parameter is modified by introducing the interfacial layer with specific material properties. By changing the interface characteristics through this additional layer, the leakage current is reduced while maintaining the capacitor's functional performance, thus improving reliability without fundamentally changing the capacitor's operating parameters.

Inventive Principle:
Principle #35Parameter changes

2Volume of moving object

If device size is reduced for miniaturization, then integration density is improved, but leakage current increases due to reduced electrical energy barriers

Engineering Contradiction:
Improvecapacitor sizeVSAvoidcapacitor reliability
Core Design Contradiction:
Volume of moving objectVSReliability

Solution Approach 1:

The interfacial layer is applied locally at the critical interface between the dielectric and the second electrode, where the electrical energy barrier is most needed. This localized approach allows miniaturization of the overall capacitor while maintaining high reliability at the specific interface region where leakage current occurs.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The capacitor structure uses composite materials by combining the dielectric layer with an interfacial layer having different material properties. This composite interface structure creates a higher electrical energy barrier that compensates for the reduced size effects, allowing miniaturization while maintaining reliability.

Inventive Principle:
Principle #40Composite materials

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The interfacial layer effectively reduces leakage current by creating a consistent electrical energy barrier, enhancing the reliability of the capacitor by ensuring symmetrical current-voltage characteristics in both directions of applied voltage.

Implementation Method 1

the interfacial layer increases an electrical energy barrier between the second electrode and the dielectric layer relative to that of a direct interface therebetween

Methodology Applied
Scientific EffectElectrical energy barrier: Electrical Resistance

Data Source

PatentEP4336559B1Integrated circuit device
Publication Date: 2024.11.27 SAMSUNG ELECTRONICS CO LTD
  • EP4336559B1 patent drawingFigure 1
  • EP4336559B1 patent drawingFigure 2A
  • EP4336559B1 patent drawingFigure 2B

AI summary

An integrated circuit device includes a transistor on a substrate and a capacitor structure electrically connected to the transistor, wherein the capacitor structure includes a first electrode (110) including a first conductive material having a first work function, a dielectric layer (120) on the first electrode, the dielectric layer including first metal, a second electrode (130) on the first electrode with the dielectric layer therebetween and including a second conductive material having a second work function that is less than the first work function, and an interfacial layer (140) between the dielectric layer and the second electrode, where an electrical energy barrier between the second electrode and the dielectric layer is increased by the interfacial layer relative to that of a direct interface therebetween.