Capacitor Interfacial Layer Layout for Leakage-Resistant DRAM Cells
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Solution Overview
Problem
Semiconductor devices face challenges in achieving high reliability and multi-functionalization due to complex structures and integration, particularly in maintaining dielectric characteristics and preventing leakage phenomena in capacitor structures.
Innovation Solution
A semiconductor device with a capacitor structure that includes a substrate, gate structure, capacitor contact, lower electrode, supporter, interfacial layer with halogen materials, capacitor insulating layer, and upper electrode, where the halogen materials are strategically positioned to enhance dielectric characteristics and prevent electrical leakage by isolating lower electrodes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a capacitor structure is used in semiconductor devices, then electrical leakage is prevented and dielectric characteristics are maintained, but leakage phenomena still occur due to complex integration and structure
Solution Approach 1:
An interfacial layer is introduced between the lower electrode and the capacitor insulating layer to act as an intermediary barrier. This interfacial layer includes a halogen material layer that prevents direct contact and potential leakage paths between the electrode and insulating layer, thereby improving dielectric characteristics and preventing electrical leakage in the capacitor structure
Solution Approach 2:
The interfacial layer is constructed as a composite structure including a first metal material layer, a first bonding material layer, and a halogen material layer. This composite material approach combines the advantages of each material to achieve both structural integrity and enhanced dielectric properties, effectively preventing leakage while maintaining reliability
2Reliability
If halogen materials are added to the interfacial layer, then dielectric characteristics are enhanced and leakage is prevented, but device structure becomes more complex
Solution Approach 1:
The halogen material is specifically positioned in the interfacial layer where it is most needed - at the interface between the lower electrode and capacitor insulating layer. This localized application of halogen material enhances dielectric characteristics at the critical leakage-prone interface without unnecessarily complicating the entire device structure
Solution Approach 2:
The interfacial layer is segmented into multiple functional sub-layers: a first metal material layer, a first bonding material layer, and a halogen material layer. This segmentation allows each layer to perform its specific function optimally while maintaining overall structural organization, thereby enhancing dielectric properties without creating unmanageable complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed solution effectively enhances dielectric characteristics and prevents leakage in capacitor structures, improving the reliability and functionality of semiconductor devices by strategically using halogen materials in the interfacial layer.
Implementation Method 1
The interfacial layer may include a first metal material, a first bonding material bonded to the first metal material, and a halogen material bonded to the first metal material
Implementation Method 2
The surface-processing the lower electrode and the supporter may include reacting a first source including a halogen compound with the lower electrode and the supporter
Data Source
AI summary
A semiconductor device of the disclosure may include a substrate, a gate structure on the substrate, a capacitor contact structure connected to the substrate, a lower electrode connected to the capacitor contact structure, a supporter supporting a sidewall of the lower electrode, an interfacial layer covering the lower electrode and including a halogen material, a capacitor insulating layer covering the interfacial layer and the supporter, and an upper electrode covering the capacitor insulating layer. The interfacial layer may include a first surface contacting the lower electrode, and a second surface contacting the capacitor insulating layer. The halogen material of the interfacial layer may be closer to the first surface than to the second surface.