Capacitor Layer Separation in Display Devices

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Solution Overview

Problem

Existing display devices face limitations in improving performance due to the restriction of using a metal film in the same layer as the gate electrode for the capacitor, which hinders the enhancement of thin film transistor performance.

Innovation Solution

A display device configuration where the metal film constituting the capacitor is provided in a different layer from the transistor section, allowing for independent selection of materials and reducing resistance in the wiring layer, thereby improving performance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Device complexity

If a metal film in the same layer as the gate electrode is used for one electrode of the capacitor, then the device structure is simplified, but the thin film transistor performance improvement is restricted due to arrangement and material constraints

Engineering Contradiction:
Improvedevice structureVSAvoidthin film transistor performance
Core Design Contradiction:
Device complexityVSReliability

Solution Approach 1:

The patent applies dimensional separation by moving the capacitor electrode from the same layer as the gate electrode to a different layer (upper or lower layer). This layer separation allows independent optimization of the TFT structure and capacitor structure, enabling performance improvement without being constrained by the gate electrode's material and arrangement choices.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Ease of manufacture

If the metal film for capacitor electrode is placed in the same layer as gate electrode, then manufacturing process is simplified, but wiring resistance cannot be reduced effectively

Engineering Contradiction:
Improvemanufacturing processVSAvoidwiring resistance
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The invention resolves the wiring resistance issue by transitioning to a three-layer configuration where the capacitor electrode exists in a separate layer from the gate electrode. This allows the wiring layer to be optimized independently for low resistance without being constrained by the capacitor electrode's material requirements, enabling effective reduction of wiring resistance while maintaining manufacturing feasibility.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

3Adaptability or versatility

If capacitor electrode shares the same layer as gate electrode, then material selection is restricted, but device complexity is reduced

Engineering Contradiction:
Improvematerial selectionVSAvoidlayer arrangement
Core Design Contradiction:
Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The patent enables versatile material selection by creating an independent layer for the capacitor electrode. This separation allows different materials to be chosen for the gate electrode and capacitor electrode based on their respective functional requirements, without being forced to use the same material due to layer constraints, thereby enhancing adaptability and versatility.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration enables higher performance by reducing wiring resistance and preventing delays, allowing for higher pixel density and faster drive capabilities, leading to improved image quality and performance.

Implementation Method 1

a gate insulating film, a semiconductor layer, and a gate electrode layer, the semiconductor layer being laminated on the gate insulating film, the gate electrode film being laminated on an opposite side to the semiconductor layer of the gate insulating film

Methodology Applied
Scientific EffectElectrical insulation: Electrical Resistance

Implementation Method 2

the second metal film being disposed over the first metal film with a first interlayer insulating film in between

Methodology Applied
Scientific EffectElectrical insulation: Electrical Resistance

Implementation Method 3

a first capacitor section that includes a first metal film and a second metal film, the first metal film being disposed at a same level as a wiring layer that is electrically connected to the semiconductor layer

Methodology Applied
Scientific EffectCapacitance: Capacitance

Data Source

PatentUS10903251B2Display device, semiconductor device, and method of manufacturing display device
Publication Date: 2021.01.26 SONY GROUP CORP
  • US10903251B2 patent drawing
  • US10903251B2 patent drawing
  • US10903251B2 patent drawing

AI summary

A display device according to the present disclosure includes: a transistor section (100) that includes a gate insulating film (130), a semiconductor layer (140), and a gate electrode layer (120), the semiconductor layer being laminated on the gate insulating film, the gate electrode film being laminated on an opposite side to the semiconductor layer of the gate insulating film; a first capacitor section (200) that includes a first metal film (210) and a second metal film (220), the first metal film being disposed at a same level as wiring layers (161, 162) that are electrically connected to the semiconductor layer and is disposed over the transistor section, the second metal film being disposed over the first metal film with a first interlayer insulating film (152) in between; and a display element that is configured to be controlled by the transistor section.