Capacitor Fabrication via Mold Layers and Dry Cleaning
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Solution Overview
Problem
Current methods for forming capacitors in semiconductor devices face challenges in achieving superior electrical performance and efficient manufacturing processes, particularly in DRAM devices where capacitor performance significantly impacts memory device performance.
Innovation Solution
A method involving sequential formation of mold layers, support material layers, and mask patterns on a substrate to create recesses for lower electrodes, followed by dry cleaning and reduction of electrode widths, dielectric layer formation, and upper electrode deposition, ensuring stable and efficient capacitor construction.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional capacitor fabrication methods are used, then manufacturing process is simpler, but electrical performance is inferior
Solution Approach 1:
The fabrication process is divided into multiple sequential stages: forming mold layers (first and second), forming support material layers (first and second), creating mask patterns, forming recesses, depositing lower electrodes, removing mask patterns, reducing electrode widths, and forming upper electrodes. Each stage serves a specific function to achieve superior electrical performance while maintaining manufacturability through systematic process breakdown.
Solution Approach 2:
Mold layers and support material layers are formed in advance before the actual electrode formation. The first mold layer and first support material layer are prepared before lower electrode deposition, and the second mold layer is prepared before upper electrode formation. This preliminary preparation ensures precise positioning and dimensional control, leading to improved electrical performance.
2Reliability
If electrode width is reduced to improve performance, then electrical performance improves, but manufacturing precision requirements increase
Solution Approach 1:
Mask patterns are introduced as intermediary elements to define and control the dimensions of lower and upper electrodes. The mask patterns serve as templates that guide the formation of electrodes with precise width control. This intermediary approach enables accurate dimension control without directly requiring high-precision electrode deposition processes.
Solution Approach 2:
Physical removal of mask patterns through dry cleaning processes replaces direct mechanical control of electrode dimensions. The mask patterns are removed after serving their dimensional definition purpose, allowing precise electrode width control through a chemical/cleaning process rather than requiring precise mechanical alignment during electrode formation.
3Reliability
If multiple mold layers and support layers are formed, then capacitor performance is enhanced, but device complexity increases
Solution Approach 1:
The mold layers and support material layers serve multiple functions: they define geometric patterns, provide structural support during processing, control dimensional precision, and facilitate subsequent removal without affecting the capacitor structure. This multi-functionality reduces the need for additional specialized layers, thereby managing overall device complexity while enhancing performance.
Solution Approach 2:
The first mold layer, second mold layer, and mask patterns are temporary structures that are removed after serving their purpose in defining and supporting the capacitor structure. The first mold layer is removed after lower electrode formation, and the second mold layer is removed after upper electrode formation. This selective removal reduces final device complexity while maintaining performance benefits during the fabrication process.
4Reliability
If mask pattern removal is performed to expose electrode, then capacitor performance improves, but manufacturing process complexity increases
Solution Approach 1:
Dry cleaning processes are used to remove mask patterns instead of mechanical or chemical etching methods. This substitution provides a cleaner, more controlled removal process that exposes the electrode surfaces without damaging the underlying capacitor structure, thereby improving performance while maintaining ease of manufacture through a standardized cleaning process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the fabrication of semiconductor devices with enhanced electrical performance and simplified manufacturing, specifically improving capacitor performance and reducing defects, thereby enhancing the overall efficiency of semiconductor memory devices.
Implementation Method 1
removing the mask pattern by a dry cleaning process
Data Source
AI summary
Capacitor forming methods may include sequentially forming a first mold layer, a first support material layer, and a second mold layer on a substrate, forming a mask pattern on the second mold layer, forming a recess in the second mold layer, the first support material layer, and the first mold layer using the mask pattern as a mask, forming a lower electrode in the recess, removing the mask pattern by a dry cleaning process, reducing a width of an upper portion of the lower electrode, removing the first mold layer, forming a dielectric layer on a surface of the lower electrode, and forming an upper electrode on the dielectric layer.