Capacitor Multilayer Film Stress Balancing
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Solution Overview
Problem
As semiconductor devices shrink, stacked capacitors in memory cells face structural instability due to electrode collapse and deformation, leading to excess leakage current and potential device failure.
Innovation Solution
A capacitor design featuring a first titanium nitride electrode on a substrate, a dielectric film, and a multilayer film with a stacking structure of hafnium, zirconium oxide, and aluminum oxide layers, which balances stress and strain profiles to maintain structural stability, even after oxide removal.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If device features are shrunk to improve integration density, then productivity and integration density are improved, but structural stability of stacked capacitors deteriorates due to electrode collapse and deformation
Solution Approach 1:
The capacitor structure is segmented into multiple functional layers including a lower electrode, dielectric film, upper electrode, and stress-balancing film. This segmentation allows each layer to be optimized independently for its specific function while contributing to overall structural stability at scaled dimensions
Solution Approach 2:
The patent introduces a stress-balancing film with specific mechanical properties (tensile or compressive stress) to counteract the inherent stress in scaled capacitor structures. By changing the stress parameter through material selection and layer configuration, structural stability is maintained even as device dimensions are reduced
2Reliability
If electrode collapse and deformation occur in stacked capacitors, then structural stability deteriorates, but leakage current increases and device reliability worsens
Solution Approach 1:
The stress-balancing film is introduced as a preventive measure to counteract stress-induced deformation before it occurs. This film compensates for the inherent compressive or tensile stress in the capacitor stack, preventing electrode collapse and the subsequent leakage current that would result from such deformation
Data Source
AI summary
The present disclosure provides a capacitor, a semiconductor device, and a method for preparing a capacitor. The semiconductor device includes a plurality of memory cells, at least one of the memory cells including a capacitor. The capacitor includes a first electrode comprising titanium nitride and disposed on a substrate, a dielectric film disposed on the first electrode, a multilayer film disposed on the dielectric film, and a second electrode comprising titanium nitride and disposed on the multilayer film. The method for preparing the capacitor includes forming the first electrode comprising titanium nitride on the substrate, forming a dielectric film on the first electrode, forming the multilayer film on the dielectric film, and forming the second electrode comprising titanium nitride on the multilayer film.