Capacitor Structure With Nitrogen-Enhanced Dielectric

Resolve Bottlenecks,
Find Innovative SolutionsGenerate Solutions

Solution Overview

Problem

The integration degree of semiconductor devices is compromised when attempting to improve the electrical characteristics of capacitor structures by increasing the thickness of the dielectric layer, as this often leads to deteriorated performance.

Innovation Solution

A capacitor structure is designed with a lower electrode made of metal nitride and a dielectric layer comprising metal oxide and nitrogen, where the nitrogen content is maximized, particularly through a process involving seed layers and oxidation, allowing for enhanced permittivity without increasing the dielectric layer's thickness.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If the thickness of the dielectric layer is increased to improve the permittivity and electrical characteristics of the capacitor structure, then the electrical characteristics are improved, but the integration degree of the semiconductor device is deteriorated

Engineering Contradiction:

Improveelectrical characteristicsVSAvoidintegration degree

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The patent changes the chemical composition parameters of the dielectric layer by incorporating nitrogen into the metal oxide structure. This compositional parameter change increases the permittivity of the dielectric material itself, allowing for improved electrical characteristics without increasing the physical thickness of the layer, thus maintaining device integration density

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent creates a composite dielectric material by combining metal oxide with nitrogen, forming a nitrogen-containing metal oxide compound. This composite material achieves higher permittivity than conventional metal oxides alone, enabling improved capacitor performance without requiring increased layer thickness

Inventive Principle:

Principle #40Composite materials

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enhances the electrical characteristics of the capacitor structure while maintaining the integration degree of the semiconductor device, ensuring improved performance without compromising device integration.

Implementation Method 1

The dielectric layer may include a metal oxide and nitrogen (N), the metal oxide having a chemical formula of M2Ox

Methodology Applied

Scientific EffectNitrogen incorporation: Absorption (physical)

Implementation Method 2

performing an oxidation process on the third seed layer to form a dielectric layer

Methodology Applied

Scientific EffectOxidation: Oxidation

Data Source

PatentUS11695034B2Capacitor structure, method of forming the same, semiconductor device including the capacitor structure and method of manufacturing the same

Publication Date: 2023.07.04 SAMSUNG ELECTRONICS CO LTD

AI summary

A capacitor structure may include a lower electrode on a substrate, a dielectric layer on the substrate, and an upper electrode on the dielectric layer. The lower electrode may include a metal nitride having a chemical formula of M1Ny (M1 is a first metal, and y is a positive real number). The dielectric layer may include a metal oxide and nitrogen (N), the metal oxide having a chemical formula of M2Ox (M2 is a second metal, and x is a positive real number). A maximum value of a detection amount of nitrogen (N) in the dielectric layer may be greater than a maximum value of a detection amount of nitrogen (N) in the lower electrode.