Capacitor Oxide Barrier Structure for Withstand Voltage Stability
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional capacitors experience a decrease in withstand voltage characteristics due to the volume change of the oxide film formed between the base material and the dielectric layer, leading to defects in the dielectric film.
Innovation Solution
A capacitor design that includes a metal base material, a dielectric layer, a conductive layer, an oxide layer, and an oxygen barrier layer, where the oxide layer has a first oxidized region with a thickness of 3 nm or less and a second oxidized region, and the oxygen barrier layer is between the oxide layer and the dielectric layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the dielectric film is formed on the base material under an oxidizing atmosphere, then the dielectric film can be formed, but an oxide film is formed between the base material and the dielectric film which causes volume change and defects
Solution Approach 1:
The oxide layer is segmented into two distinct regions: a first oxidized region containing base material metal and a second oxidized region containing oxygen barrier layer atoms and base material metal. This segmentation allows differential control of oxidation to manage volume change and protect the dielectric layer
Solution Approach 2:
The oxygen barrier layer is formed on the base material before the dielectric layer is deposited. This preliminary action prevents excessive oxidation of the base material during subsequent dielectric film formation, thereby preventing volume change that would cause defects
2Ease of manufacture
If the oxide film volume changes due to reduction under reducing atmosphere, then the conductor film can be formed, but defects are formed in the dielectric film
Solution Approach 1:
The oxygen barrier layer is formed in advance before conductor film deposition. This preliminary barrier prevents oxygen diffusion and excessive oxide formation during reducing atmosphere processes, eliminating volume change that would defect the dielectric film
Solution Approach 2:
The oxygen barrier layer acts as an intermediary between the base material and the dielectric layer. It mediates the interaction by controlling oxygen exchange, preventing direct contact between reducing atmosphere and the oxide layer that would cause volume change
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed solution effectively suppresses the decrease in withstand voltage characteristics by minimizing the volume change of the oxide film, thereby reducing defects in the dielectric layer and enhancing the capacitor's reliability.
Implementation Method 1
an oxygen barrier layer between the oxide layer and the dielectric layer
Implementation Method 2
When the conductor film is formed on the dielectric film under a reducing atmosphere, the oxide film is reduced, and the volume of the oxide film can change
Data Source
AI summary
A capacitor that includes: a metal base material; a dielectric layer on the metal base material; a conductive layer on the dielectric layer; an oxide layer between the metal base material and the dielectric layer; and an oxygen barrier layer between the oxide layer and the dielectric layer, wherein the oxide layer includes: a first oxidized region containing a metal of the metal base material; and a second oxidized region containing an atom of the oxygen barrier layer and a metal of the metal base material, and a thickness of the first oxidized region is 3 nm or less and is 0% to 50% of a thickness of the second oxidized region.