Capacitor Structure With Peak-Valley Electrodes For Broadband Noise Suppression
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional capacitor structures face challenges in achieving high capacitance and low impedance at high frequency bands due to limitations in increasing the dielectric constant or reducing the gap distance between conductive materials, leading to inadequate noise suppression across all frequency bands.
Innovation Solution
A composite capacitor structure with a peak-valley like configuration that creates multiple gap distances between electrode layers, allowing for parallel combinations of different capacitances and increased effective surface area, thereby enhancing capacitance and impedance bandwidth.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the dielectric constant (K) of the dielectric layer is increased to increase capacitance, then capacitance is improved, but material and process limitations make it difficult to feasibly increase the dielectric constant
Solution Approach 1:
The patent transitions from a conventional flat capacitor structure to a three-dimensional peak-valley structure. By creating peaks and valleys on the electrode surfaces, the effective overlapped area is significantly increased without increasing the planar footprint. This dimensional transformation allows capacitance enhancement while maintaining manufacturing feasibility with standard PCB fabrication processes.
Solution Approach 2:
The patent introduces curved surface features (peaks and valleys) on the electrode layers instead of flat surfaces. The peak-valley structure creates varying gap distances between electrodes, with some regions having smaller gaps that contribute more to capacitance. This curvature-based approach increases the effective capacitance while remaining compatible with conventional manufacturing methods.
2Quantity of substance
If the gap distance (d) between conductive materials is decreased to increase capacitance, then capacitance is improved, but process and fabrication limitations make it difficult to feasibly decrease the gap distance
Solution Approach 1:
The patent applies local quality by creating regions with different gap distances within the same capacitor structure. The peak-valley structure results in some areas having smaller gap distances (in the valleys) and other areas having larger gaps (at the peaks). This local variation allows the capacitor to benefit from smaller gaps in critical regions while maintaining overall manufacturability and avoiding the need to uniformly decrease gaps across the entire structure.
3Quantity of substance
If the overlapped area (A) between conductive materials is increased to increase capacitance, then capacitance is improved, but flat substrate surface limitations prevent significant increase in overlapped area
Solution Approach 1:
The patent resolves this contradiction by utilizing the third dimension (vertical height) to increase the effective overlapped area. By creating peak-valley structures, the electrode surfaces are transformed from flat two-dimensional planes to three-dimensional surfaces with increased surface area. This allows the capacitor to achieve larger capacitance without requiring a larger planar substrate area, as the increased capacitance comes from the increased surface area of the curved electrode surfaces.
4Ease of manufacture
If conventional embedded capacitor structures are used, then manufacturing is simple, but they cannot achieve low impedance at high frequency bands
Solution Approach 1:
The patent introduces dynamic characteristics to the capacitor structure by creating multiple resonant frequency points through the peak-valley structure. The varying gap distances create different capacitance values in different regions, which translates to multiple resonant frequencies. This dynamic behavior allows the capacitor to effectively suppress noise across a broader frequency range, including high frequency bands, while maintaining compatibility with conventional manufacturing processes.
5Object-affected harmful factors
If on-chip capacitors are used to inhibit noise at high frequency bands, then high frequency noise suppression is improved, but they take up a lot of chip space
Solution Approach 1:
The patent achieves high frequency noise suppression in a compact footprint by utilizing three-dimensional peak-valley structures. The vertical dimension and surface curvature provide increased effective capacitance and multiple resonant frequencies without requiring a large planar area. This allows the capacitor to function effectively at high frequencies while occupying minimal chip space, resolving the contradiction between noise suppression performance and space consumption.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The peak-valley structure effectively inhibits noise across low, middle, and high frequency bands, providing large capacitance and low impedance, suitable for decoupling capacitors in electronic circuits.
Implementation Method 1
The capacitance (C) of the capacitor device may be expressed by the following equation: C=KA/d wherein K is a dielectric constant (k value) of a dielectric layer, d is a gap distance between conductive materials, and A is an overlapped area between the conductive materials
Implementation Method 2
K is a dielectric constant (k value) of a dielectric layer
Data Source
AI summary
The disclosure provides a capacitor structure. A first dielectric layer is disposed over the first electrode layer. A second electrode layer is disposed over the first dielectric layer. At least one of the first electrode layer and the second electrode layer has a peak-valley like structure to create at least two different gap distances therebetween, thereby providing parallel combinations of at least two different capacitances.