Semiconductor Capacitor Plasma Nitridation for Leakage Reduction
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Solution Overview
Problem
The challenge in semiconductor manufacturing is to produce semiconductor capacitors with high capacitance and reduced current leakage, particularly as integration levels increase and component distances shrink, leading to manufacturing complexity and increased leakage due to close distances.
Innovation Solution
A semiconductor capacitor design involving conductive layers treated with plasma to remove impurities like chlorine atoms and replace them with nitrogen atoms, using dielectric layers of hafnium dioxide and other metal oxides, and a method of forming these layers through atomic layer deposition (ALD) to enhance capacitance and reduce leakage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If integration level is increased to improve storage capability, then storage capability is improved, but manufacturing complexity increases and current leakage increases
Solution Approach 1:
The patent applies parameter changes by modifying the chemical composition of the conductive layer through plasma treatment. Specifically, chlorine atoms in the conductive layer are replaced with nitrogen atoms, changing the material parameters to reduce current leakage. This allows higher integration without proportionally increasing leakage, thus improving storage capability while managing the complexity trade-off
2Quantity of substance
If component distance is shortened to improve integration, then storage capability is improved, but current leakage increases
Solution Approach 1:
The patent changes the material parameters of the conductive layer by replacing chlorine with nitrogen through plasma treatment. This parameter change reduces the electrical conductivity of the conductive layer, thereby reducing current leakage even when component distances are shortened for higher integration
Solution Approach 2:
The patent converts the potentially harmful effect of chlorine atoms (which increase leakage) into a benefit by using plasma treatment to remove them and replace them with nitrogen. The chlorine presence, which would normally increase leakage in closely-spaced components, is transformed into an opportunity to reduce leakage through controlled removal and replacement
3Object-affected harmful factors
If plasma treatment is applied to remove impurities and replace with nitrogen, then current leakage is reduced, but manufacturing process complexity increases
Solution Approach 1:
The patent uses plasma as an intermediary to achieve the replacement of chlorine with nitrogen in the conductive layer. The plasma treatment acts as a mediator that facilitates the removal of harmful chlorine atoms and introduces nitrogen atoms without requiring multiple separate processing steps, thus reducing the overall process complexity while achieving leakage reduction
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces leakage current and resistivity by replacing impurities with nitrogen, improving the yield and quality of semiconductor capacitors.
Implementation Method 1
the first conductive layer or the second conductive layer is performed by a plasma treatment to remove impurities therein and replace the impurities with nitrogen atoms
Implementation Method 2
the dielectric layer includes atomic layer deposition (ALD) films made of hafnium dioxide, zirconium dioxide, aluminum oxide, or combinations thereof
Data Source
AI summary
The present disclosure provides a semiconductor capacitor. The semiconductor capacitor includes a first conductive layer, a second conductive layer and a dielectric layer. The dielectric layer is located between the first conductive layer and the second conductive layer, and the first conductive layer and/or the second conductive layer are performed a plasma treatment to remove impurities therein and replace the impurities with nitrogen atoms. In addition, a method of forming a semiconductor capacitor is also disclosed.