Capacitor with Randomly Distributed Electrodes in Anodized Holes
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Solution Overview
Problem
Existing capacitor technologies face challenges in achieving high capacitance density, selectivity of dielectric and electrode materials, and simplifying the manufacturing process, particularly due to difficulties in micro-processing and uniformity of pillar-shaped electrodes and dielectric film thickness.
Innovation Solution
A capacitor design featuring a pair of conductive layers with a dielectric layer in between, where first and second electrodes are randomly distributed through holes in the dielectric layer, and a method involving anodizing a metal substrate to form oxide substrates with specific hole structures for electrode and dielectric material placement, improving electrode selectivity and manufacturing efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If grain boundary-insulated semiconductor ceramic with through-holes is used as dielectric layer and capacitive electrode bodies are selectively inserted, then capacitor structure is formed, but large-capacity with increase of area is difficult to achieve due to difficulty of micro-processing
Solution Approach 1:
The capacitor structure is segmented into multiple independent holes with electrode bodies inserted in each hole, allowing parallel capacitance accumulation. This segmentation enables scaling capacitance by increasing the number of holes rather than increasing individual hole size, thus achieving large capacity without complex micro-processing of large structures.
Solution Approach 2:
The invention transitions from planar capacitance to three-dimensional capacitance by inserting electrode bodies into holes extending through the dielectric layer. This vertical dimension allows capacitance to scale with the number and depth of holes rather than just lateral area, overcoming micro-processing limitations.
2Manufacturing precision
If porous substrate is used as mask and thin-film forming process is carried out to form pillar-shaped bodies, then capacitor structure is formed, but uniform section and desired length of pillar-shaped bodies are difficult to obtain due to hole enlargement during etching
Solution Approach 1:
The porous substrate is used as a mask to pre-form holes with precise dimensions before the electrode material deposition. This preliminary structuring ensures that the subsequent electrode bodies are formed with uniform sections and controlled lengths, as the mask defines the exact geometry before any potential enlargement occurs during processing.
Solution Approach 2:
The porous substrate acts as an intermediary mask that temporarily holds the structural definition during manufacturing. It mediates between the desired final structure and the manufacturing process, allowing precise hole formation that resists enlargement during subsequent etching or deposition steps.
3Quantity of substance
If pillar-shaped bodies are lengthened to increase capacitance, then capacitance increases, but variation in film thickness of dielectric thin film occurs making it difficult to achieve large-capacity with increased height
Solution Approach 1:
Instead of relying on a single tall pillar structure that would require thick dielectric film, the invention segments the capacitance into multiple holes with electrode bodies. This allows each individual dielectric layer to maintain uniform thickness while the total capacitance increases through the cumulative effect of multiple segmented units.
Solution Approach 2:
The dielectric layer is applied with consistent local quality (uniform thickness) across all hole surfaces. By maintaining uniform dielectric properties at each local position rather than increasing overall height, the invention achieves high capacitance through optimized local structure rather than global dimension increases.
4Quantity of substance
If random distribution of first and second electrodes in holes is implemented, then capacitance density increases, but manufacturing complexity may increase
Solution Approach 1:
The random distribution of first and second electrodes is implemented at the hole level rather than requiring complex spatial arrangements. Each hole independently contains electrodes with random distribution, simplifying the overall manufacturing while achieving high capacitance density through the statistical effect of many independently contributing units.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances capacitance density and manufacturing simplicity by allowing for larger capacitive areas and uniform electrode distribution, while improving the selectivity of electrode and dielectric materials, enabling the production of high-capacity capacitors with reduced manufacturing complexity.
Implementation Method 1
a first step of forming a plurality of first holes, which have a predetermined depth and are filled with electrode material, in one main surface of an oxide substrate obtained by anodizing a metal substrate
Data Source
AI summary
A capacitor element includes a pair of conductive layer, a plurality of first electrodes and second electrodes, and insulation caps for insulating these electrodes from the conductive layers. By anodizing a metal substrate in two stages, holes filled with the first electrodes and holes filled with the second electrodes are randomly distributed.