Capacitor Device Recess Imprinting Planarization
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Solution Overview
Problem
In the manufacturing of capacitor devices, the use of roller coaters to form dielectric layers often results in uneven film thickness due to underlying layer irregularities, leading to defects and the inability to miniaturize capacitors effectively, as dry film resists struggle to follow level differences, necessitating wide spacing between capacitors.
Innovation Solution
The method involves forming recess portions on the substrate using an imprinting process, burying lower electrodes within these recesses, and then forming dielectric layer patterns and upper electrodes, ensuring a planar surface and allowing for precise, closely spaced capacitor construction.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a dielectric layer is formed by a roller coater on an uneven surface, then the manufacturing process is simple, but the film thickness becomes uneven
Solution Approach 1:
The patent applies preliminary action by forming recess portions in the insulating layer before depositing the dielectric layer. This pre-prepared structure ensures that when the dielectric layer is formed by roller coater, it lands on a planarized surface, guaranteeing uniform film thickness from the outset rather than attempting to correct unevenness afterward.
Solution Approach 2:
The recess portions act as an intermediary structure between the insulating layer and the dielectric layer. By creating these recesses, the patent introduces a mediating element that allows the roller coater to deposit a uniform dielectric layer even though the underlying insulating layer may have surface irregularities.
2Ease of manufacture
If dry film resist is used to pattern lower electrodes, then the process is conventional, but pattern separation occurs when capacitors are closely spaced
Solution Approach 1:
The patent applies preliminary action by forming the recess portions and lower electrodes before forming the dielectric layer and upper electrodes. This sequence allows the use of simpler patterning methods for the lower electrodes while maintaining precision, as the critical closely-spaced features are established before subsequent layers are added.
Solution Approach 2:
The patent inverts the conventional sequence by forming lower electrodes first in recess portions, then adding the dielectric layer and upper electrodes afterward. This reversal allows better control over pattern spacing and eliminates the pattern separation issue that occurs when attempting to pattern lower electrodes after forming closely-spaced capacitor structures.
3Reliability
If wide intervals are provided between capacitors, then pattern separation is avoided, but device miniaturization is prevented
Solution Approach 1:
By preliminarily forming recess portions with precise dimensions and spacing, the patent enables reliable pattern formation at close spacings. The pre-defined recess structures guide subsequent material deposition and patterning steps, allowing capacitors to be placed close together without risking pattern separation.
Solution Approach 2:
The patent changes the critical parameter from capacitor spacing to recess portion depth and width. By controlling the geometry of the recess portions, the patent achieves reliable pattern formation independent of capacitor spacing, thereby enabling miniaturization while maintaining manufacturing reliability.
4Manufacturing precision
If complex photolithography steps are used to achieve precise patterning, then manufacturing precision is improved, but manufacturing time and cost increase
Solution Approach 1:
The patent replaces complex photolithography mechanical systems with a simpler imprinting process for forming recess portions. This substitution maintains high positioning accuracy for capacitors while significantly reducing manufacturing steps, time, and cost associated with multiple photolithography cycles.
Solution Approach 2:
The patent changes the approach from using complex photolithography parameters (multiple exposure, development, etching steps) to controlling recess portion geometry parameters (depth, width, spacing). This parameter transformation simplifies the manufacturing process while achieving the same or better positioning accuracy.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the formation of capacitors with uniform dielectric layer thickness and reduced spacing between capacitors, facilitating miniaturization while reducing manufacturing time and cost by avoiding the need for wide intervals and complex photolithography steps.
Implementation Method 1
heating and pressing both surface sides of the resin substrate with the die
Data Source
AI summary
A method of manufacturing a capacitor device of the present invention, includes the steps of, forming an insulating layer on a substrate, forming a recess portion in the insulating layer by an imprinting process, forming a lower electrode by filling a metal layer in the recess portion in the insulating layer, forming a photosensitive dielectric layer on the lower electrode, forming an upper electrode on the dielectric layer, and forming a dielectric layer pattern under the upper electrode by exposing/developing the dielectric layer while using the upper electrode as a mask.