Semiconductor Capacitor Rim Insulation via Laminated Structure
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Solution Overview
Problem
Existing semiconductor devices with capacitors face challenges in maintaining insulation properties while increasing the capacity value, particularly due to manufacturing process limitations that affect the rim section of electrodes.
Innovation Solution
A semiconductor device design that includes a laminated structure with a second insulating film and a semiconductor film between part or all of the rim of the lower electrode and the first insulating film, enhancing the thickness of the insulating film between electrodes to improve capacity while maintaining insulation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the insulating film thickness is increased to improve insulation properties, then the capacity value decreases
Solution Approach 1:
The patent applies local quality by providing a laminated structure (second insulating film + semiconductor film) specifically on the rim section of the lower electrode, while the central portion maintains only the first insulating film. This localized enhancement improves insulation where manufacturing defects occur without reducing overall capacitor capacity.
Solution Approach 2:
The patent transitions from a single-layer insulating film to a multi-layer laminated structure on the rim section. By adding the second insulating film and semiconductor film in layers, it creates a composite structure that provides both insulation and capacitance enhancement in the critical rim region.
2Ease of manufacture
If the rim section of the lower electrode is left uncovered, then the manufacturing process is simpler, but insulation properties deteriorate due to disordered rim shape
Solution Approach 1:
The patent applies preliminary action by forming the laminated structure on the rim section before forming the upper electrode. This ensures that the rim defects are addressed in advance, preventing insulation failures before the capacitor assembly is completed.
Solution Approach 2:
The semiconductor film in the laminated structure acts as an intermediary that compensates for the disordered rim shape. It provides a stable interface between the first insulating film and the upper electrode, ensuring reliable insulation despite manufacturing variations in the rim section.
3Device complexity
If a single insulating film is used, then the device structure is simpler, but the capacity value is insufficient
Solution Approach 1:
The patent maintains structural simplicity in the central portion with a single first insulating film, while locally enhancing the rim section with a laminated structure. This selective complexity enhancement increases capacity where needed without unnecessarily complicating the entire device structure.
Solution Approach 2:
The patent uses composite materials by combining the first insulating film, second insulating film, and semiconductor film in a laminated structure on the rim section. This composite approach leverages the different properties of each material to achieve both insulation and enhanced capacitance in a compact structure.
Data Source
AI summary
A semiconductor device includes: a capacitor including a first insulating film between a lower electrode and an upper electrode; and a first laminated structure including a second insulating film and a semiconductor film, the second insulating film and the semiconductor film being located between part or all of a rim of the lower electrode and the first insulating film.