Capacitor With Segmented Gate Electrode For Doping Control
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Solution Overview
Problem
In active patterning skip processes for capacitor deposition, the lack of masks during the deposition process makes it difficult to dope the capacitor, leading to challenges in forming effective electrodes and achieving desired capacitance.
Innovation Solution
A capacitor design that includes a gate electrode with grooves, an intrinsic semiconductor layer, and parasitic capacitors connected in parallel, along with a guard ring to enhance capacitance and reduce size, allowing for efficient doping and improved capacitance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If active patterning skip process is used to reduce mask数量, then device complexity is reduced, but manufacturing precision deteriorates because gate electrode cannot be properly doped
Solution Approach 1:
The gate electrode is divided into multiple segments with different doping concentrations. The gate electrode includes a first gate electrode portion with first doping concentration and a second gate electrode portion with second doping concentration different from the first. This segmentation allows each portion to be optimized for specific functions while maintaining the simplified active patterning skip process.
Solution Approach 2:
Different regions of the gate electrode are assigned different doping concentrations to achieve local optimization. The first gate electrode portion has different electrical properties than the second gate electrode portion, allowing each region to perform its specific function optimally without requiring complex mask patterns for uniform doping throughout.
2Ease of manufacture
If gate electrode is deposited without masks, then ease of manufacture is improved, but manufacturing precision deteriorates because doping becomes difficult
Solution Approach 1:
The gate electrode structure is designed with predetermined doping concentration variations built into its composition. Rather than attempting to achieve doping variations through complex mask-based deposition, the structure itself is configured with multiple portions having different doping concentrations from the outset, simplifying the manufacturing process while maintaining precision.
Solution Approach 2:
The doping concentration parameter is varied within the gate electrode structure. By changing the doping concentration from the first value in the first gate electrode portion to the second value in the second gate electrode portion, the invention achieves precise electrical characteristics without requiring complex mask-based deposition processes.
3Area of stationary object
If capacitor size is reduced, then area is reduced, but capacitance decreases
Solution Approach 1:
The invention merges the function of the gate electrode with parasitic capacitor functionality. The gate electrode structure itself serves dual purposes: as the control electrode for the transistor and as one of the electrodes for the parasitic capacitor. This merging allows the parasitic capacitor to be formed within the existing gate electrode area without requiring additional dedicated capacitor area, thus reducing total device area while maintaining sufficient capacitance.
Solution Approach 2:
The gate electrode is designed to serve multiple functions simultaneously: it acts as the control electrode for the transistor channel and also functions as an electrode for the parasitic capacitor. This multi-functionality eliminates the need for separate dedicated capacitor structures, allowing reduced overall device area while maintaining the required capacitance through the parasitic effect.
Data Source
AI summary
A capacitor includes an active layer, a gate insulation layer on the active layer, a gate electrode on the gate insulation layer, an interlayer insulating layer on the gate electrode, and a first electrode on the interlayer insulating layer and connected to the active layer through at least one contact hole.