Solid Electrolytic Capacitor Semiconductor Layer Formation
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Solution Overview
Problem
Existing methods for producing solid electrolytic capacitors face challenges in forming high-quality semiconductor layers with large surface areas, leading to suboptimal leakage current values (LC) due to limited cathode plate surface areas.
Innovation Solution
Increasing the surface area of the cathode plate by 10 times or more during the semiconductor layer formation process, using a cathode plate with a larger surface area in the semiconductor-forming solution, and applying current between the conductor with a dielectric oxide film and the cathode plate to efficiently form a semiconductor layer on the sintered body of conductive powder.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a conventional cathode plate is used with limited surface area, then the device complexity is low, but the manufacturing precision of the semiconductor layer is insufficient leading to suboptimal leakage current values
Solution Approach 1:
The cathode plate surface area is increased by 10 times or more compared to the anode surface area, transitioning from a conventional balanced configuration to an asymmetric configuration where the cathode dominates in surface area. This dimensional change in the cathode plate enables more effective semiconductor layer formation and achieves excellent leakage current values.
2Reliability
If the cathode plate surface area is increased by 10 times or more, then the semiconductor layer quality improves leading to excellent leakage current values, but the device complexity increases
Solution Approach 1:
The key parameter change is the surface area ratio between cathode and anode, which is set to 10 times or more. This parameter change fundamentally alters the semiconductor layer formation process, enabling excellent leakage current values. The solution accepts increased device complexity as a trade-off for achieving the desired reliability improvement.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the efficient formation of a good-quality semiconductor layer on the dielectric oxide film, resulting in solid electrolytic capacitors with excellent leakage current values and improved capacitance performance.
Implementation Method 1
applying current between the conductor with a dielectric oxide film and the cathode plate to efficiently form a semiconductor layer
Implementation Method 2
forming the semiconductor layer on the dielectric oxide film by applying current between the conductor having the dielectric oxide film thereon used as an anode and a cathode plate provided in electrolysis solution
Data Source
AI summary
The invention relates to a method for producing a solid electrolytic capacitor with excellent LC value, comprising sequentially stacking a dielectric oxide film, a semiconductor layer and an electrode layer on a sintered body of conductive powder to which an anode lead is connected and then encapsulating the whole with an outer jacket resin, wherein surface area of a cathode plate used in forming the semiconductor layer on the dielectric oxide film by applying current between the conductor having the dielectric oxide film thereon used as anode and the cathode plate provided in electrolysis solution is made larger by 10 times or more than its apparent surface area to thereby efficiently form the semiconductor layer, a capacitor produced by the method, and electronic circuits and electronic devices using the capacitor.