Capacitor Shield Interconnects for Parasitic Capacitance Reduction

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Solution Overview

Problem

The existing semiconductor devices with capacitor arrays suffer from capacitance mismatch and noise due to parasitic capacitances, which affect the precision of the circuit.

Innovation Solution

The semiconductor device incorporates shield interconnect sections that enclose the upper electrodes to reduce parasitic capacitance, using a multilayer interconnect structure and fixed-potential shield interconnect sections to minimize capacitance mismatch and noise.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Object-affected harmful factors

If input interconnects are disposed at gaps between capacitor cells to reduce interference, then the applied input signals do not significantly affect other capacitor cells, but parasitic capacitances are generated between the input interconnect and adjacent capacitor cells causing capacitance mismatch and noise

Engineering Contradiction:
Improveinterference between input signals and capacitor cellsVSAvoidcapacitance mismatch
Core Design Contradiction:
Object-affected harmful factorsVSManufacturing precision

Solution Approach 1:

A shield interconnect is introduced as an intermediary element between the input interconnect and the capacitor cells. The shield interconnect is connected to a fixed potential (ground or power supply) and acts as a mediator to block the parasitic capacitance coupling between the input interconnect and adjacent capacitor cells, thereby reducing capacitance mismatch and noise while allowing the input signal to reach its target capacitor cell

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The shield interconnect is connected to a fixed potential (equipotential reference such as ground or power supply voltage). By maintaining the shield interconnect at a constant potential, the electric field between the input interconnect and adjacent capacitor cells is blocked, eliminating the parasitic capacitance effect and preventing capacitance mismatch and noise

Inventive Principle:
Principle #12Equipotentiality

2Manufacturing precision

If shield interconnect sections are added to enclose upper electrodes, then parasitic capacitance is reduced and precision is enhanced, but device complexity increases

Engineering Contradiction:
Improvecapacitance precisionVSAvoidinterconnect structure complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The shield interconnect is designed to serve multiple functions simultaneously: it acts as a shielding element to block parasitic capacitance, provides a reference potential plane, and can be integrated with existing interconnect layers. This multi-functionality reduces the need for additional separate shielding structures, thereby limiting the increase in device complexity while achieving capacitance precision improvement

Inventive Principle:
Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration significantly reduces capacitance mismatch and noise, enhancing the precision of the capacitor array and the overall performance of the semiconductor device.

Implementation Method 1

each interconnect connected to a corresponding one of the lower electrodes includes a shield interconnect section enclosing a corresponding one of the upper electrodes

Methodology Applied
Scientific EffectElectrostatic shielding: Faraday Cage

Data Source

PatentUS8217493B2Semiconductor device having capacitor cells
Publication Date: 2012.07.10 MITSUMI ELECTRIC CO LTD
  • US8217493B2 patent drawing
  • US8217493B2 patent drawing
  • US8217493B2 patent drawing

AI summary

A semiconductor device includes a plurality of capacitor cells having respective lower electrodes to which signals are applied and respective upper electrodes arranged to face the respective lower electrodes, wherein each interconnect connected to a corresponding one of the lower electrodes includes a shield interconnect section enclosing a corresponding one of the upper electrodes.