Capacitor Shield Line for Noise Reduction

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Existing semiconductor devices with analog circuits face challenges in achieving high precision for capacitance ratios between capacitors while effectively suppressing noise and maintaining excellent layout efficiency.

Innovation Solution

The semiconductor device incorporates a first and second capacitor with upper and lower electrodes, an intermediate electrode, and a shield line in the same layer, all electrically connected to a ground electrode, with the shield line positioned between the capacitors to reduce noise and enhance layout efficiency.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Area of stationary object

If multiple capacitors are arranged closely to improve layout efficiency, then area utilization is improved, but noise coupling between capacitors increases

Engineering Contradiction:
Improvelayout efficiencyVSAvoidnoise coupling
Core Design Contradiction:
Area of stationary objectVSObject-affected harmful factors

Solution Approach 1:

A shield line is introduced as an intermediary element between adjacent capacitors. This shield line is electrically connected to ground and positioned between the intermediate electrodes of neighboring capacitors, acting as a mediator that blocks noise coupling while allowing the capacitors to maintain close spacing for efficient layout utilization.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The capacitor structure is segmented by introducing intermediate electrodes and shield lines between adjacent capacitors. This segmentation creates electrical isolation zones that prevent noise coupling while maintaining compact overall structure, allowing multiple capacitors to be arranged closely without interference.

Inventive Principle:
Principle #1Segmentation

2Object-affected harmful factors

If shield lines are added between capacitors to reduce noise, then noise suppression is improved, but device complexity increases

Engineering Contradiction:
Improvenoise suppressionVSAvoidstructure complexity
Core Design Contradiction:
Object-affected harmful factorsVSDevice complexity

Solution Approach 1:

The shield line serves multiple functions simultaneously: it acts as a noise barrier between capacitors, provides a reference potential plane, and can be integrated with existing ground structures. This multi-functionality reduces the need for additional separate noise suppression components, thereby limiting the increase in device complexity.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Solution Approach 2:

The shield line structure is merged with the existing capacitor electrode layers and ground connections. Rather than adding completely separate noise suppression structures, the shield lines are integrated into the existing multi-layer capacitor architecture, sharing fabrication processes and electrical connection points, thus minimizing the increase in structural complexity.

Inventive Principle:
Principle #5Merging (Combining)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration effectively reduces noise between capacitors while maintaining high layout efficiency, allowing for precise capacitance ratios and improved shielding effects.

Implementation Method 1

a first shield line in the same layer as the first intermediate electrode... the first shield line is arranged between the first capacitor and the second capacitor... the first upper electrode, the first lower electrode, the second upper electrode, the second lower electrode and the first shield line are electrically connected to a ground electrode

Methodology Applied
Scientific EffectElectrostatic shielding: Faraday Cage

Data Source

PatentUS8159045B2Semiconductor device with shield line disposed between capacitors
Publication Date: 2012.04.17 RENESAS ELECTRONICS CORP
  • US8159045B2 patent drawing
  • US8159045B2 patent drawing
  • US8159045B2 patent drawing

AI summary

A semiconductor device includes: a first capacitor including an upper electrode, a lower electrode, an intermediate electrode arranged between the upper electrode and the lower electrode, and a shield line arranged in the same layer as the intermediate electrode; and a second capacitor, including an upper electrode, a lower electrode, and an intermediate electrode arranged between the upper electrode and the lower electrode, and arranged adjoining to the first capacitor. In the first capacitor and the second capacitor, the upper electrode, the lower electrode and the shield line are electrically connected to a ground electrode. The shield line lies between the first capacitor and the second capacitor. Accordingly, a MIM capacitor with excellent layout efficiency is provided while noise effects are reduced.