Integrated Capacitor Assembly With Metal Silicide Source/Drain Coupling
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Solution Overview
Problem
Achieving high-conductivity coupling between laterally-extending capacitors and source/drain regions of access devices in memory configurations is challenging, which affects the performance of memory devices.
Innovation Solution
The implementation of metal/metal silicide conductive bridges between capacitor electrodes and source/drain regions to facilitate high-conductivity connections, utilizing a process that includes forming recessed cavities, doping, and depositing metal-containing compositions to create conductive bridges between the capacitors and source/drain regions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional direct connection methods are used between capacitors and source/drain regions, then the manufacturing process is simple, but the electrical conductivity and access speed are insufficient
Solution Approach 1:
The patent employs a composite conductive bridge structure consisting of multiple material layers including metal (e.g., tungsten), metal silicide, and dielectric materials. This composite structure achieves superior electrical conductivity and mechanical stability compared to single-material connections, directly resolving the contradiction between reliable electrical coupling and manufacturing simplicity by providing a multi-layered solution that optimizes both performance and fabricability.
Solution Approach 2:
The invention transitions from planar two-dimensional connections to three-dimensional vertically-stacked connections. The conductive bridge extends vertically through multiple levels, enabling electrical coupling between capacitors and source/drain regions in the vertical dimension. This dimensional change allows for improved electrical performance while maintaining a compact footprint, effectively resolving the contradiction between coupling reliability and structural complexity.
2Area of stationary object
If laterally-extending capacitors are used, then the memory cell area is reduced, but the conductivity coupling to source/drain regions becomes difficult to achieve
Solution Approach 1:
The patent resolves the area-conductivity contradiction by moving the connection path from lateral (in-plane) to vertical (out-of-plane). The conductive bridge extends vertically from the source/drain region through the capacitor structure, enabling efficient electrical coupling without requiring extended lateral pathways. This vertical connection approach maintains compact memory cell area while achieving reliable conductive coupling.
Solution Approach 2:
The conductive bridge acts as an intermediary element that mediates the electrical connection between the capacitor and source/drain region. This intermediate structure provides a dedicated conductive pathway that overcomes the coupling difficulty inherent in laterally-extending capacitor configurations, enabling reliable signal transmission while maintaining area efficiency.
3Speed
If metal/metal silicide conductive bridges are formed, then the access speed is improved, but the manufacturing process complexity increases
Solution Approach 1:
The patent implements preliminary actions by forming the conductive bridge structure early in the fabrication sequence, before subsequent capacitor electrode and dielectric layer formations. The recessed cavity is prepared and the conductive bridge is deposited in advance, establishing the electrical connection pathway before additional processing steps. This preliminary action approach, while adding process steps, enables optimized material selection and reduces the need for complex post-processing modifications.
Solution Approach 2:
The conductive bridge is segmented into multiple material layers (metal and metal silicide) with distinct functional roles. This segmentation allows each layer to be optimized for specific properties (electrical conductivity, adhesion, barrier functions) and enables independent processing and quality control for each layer, making the complex structure more manageable and manufacturable despite the increased number of steps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enhances the electrical coupling between source/drain regions and capacitors, improving the access speed and performance of memory devices by establishing highly conductive connections.
Implementation Method 1
Metal is combined with exposed portions of the semiconductor material within the cavities to form a conductive bridge
Implementation Method 2
The semiconductor material within the cavities is doped
Data Source
AI summary
Some embodiments include an integrated assembly having first and second source/drain regions laterally offset from one another. Metal silicide is adjacent to lateral surfaces of the source/drain regions. Metal is adjacent to the metal silicide. Container-shaped first and second capacitor electrodes are coupled to the source/drain regions through the metal silicide and the metal. Capacitor dielectric material lines interior surfaces of the container-shaped first and second capacitor electrodes, A shared capacitor electrode extends vertically between the first and second capacitor electrodes, and extends into the lined first and second capacitor electrodes. Some embodiments include methods of forming integrated assemblies.