Capacitor Stack Annealing Sequence to Prevent Electrode Peeling
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Solution Overview
Problem
In semiconductor device manufacturing, annealing after laminating the second metal electrode film on a metal oxide can lead to gaps and insufficient contact between the metal oxide and the electrode film, causing swelling and peeling issues.
Innovation Solution
A method involving a first laminating step for the first electrode film, a second laminating step for a capacitive insulator, a third laminating step for a metal oxide, and a first annealing step for the electrode film, insulator, and metal oxide before laminating the second electrode film, using specific materials like zirconium and hafnium oxides and tungsten, molybdenum, or vanadium oxides, in a non-reducing atmosphere to enhance crystallinity and adhesion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Stability of the object's composition
If annealing is performed after laminating the second electrode film on the metal oxide, then the crystallinity of the metal oxide is improved, but gaps and insufficient contact occur between the metal oxide and the electrode film, causing swelling and peeling
Solution Approach 1:
The patent applies preliminary action by performing the annealing treatment before laminating the second electrode film onto the metal oxide. This sequence ensures that the metal oxide achieves its optimal crystalline structure and surface stability prior to the deposition of the electrode film, thereby preventing adhesion problems and structural defects that would occur if annealing were performed afterward.
2Reliability
If the second electrode film is laminated before annealing, then adhesion is maintained, but the metal oxide does not achieve proper crystallinity and contact with the electrode film is insufficient
Solution Approach 1:
The patent resolves this contradiction by performing the annealing treatment before laminating the second electrode film onto the metal oxide. This sequence ensures that the metal oxide achieves its optimal crystalline structure and surface stability prior to the deposition of the electrode film, thereby preventing adhesion problems and structural defects that would occur if annealing were performed afterward.
3Reliability
If the metal oxide thickness is increased to improve contact, then adhesion is improved, but swelling occurs in the electrode film
Solution Approach 1:
The patent applies preliminary action by performing the annealing treatment before laminating the second electrode film onto the metal oxide. This sequence ensures that the metal oxide achieves its optimal crystalline structure and surface stability prior to the deposition of the electrode film, thereby preventing adhesion problems and structural defects that would occur if annealing were performed afterward.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively suppresses swelling and peeling of the second electrode film by ensuring proper contact and adhesion with the metal oxide, maintaining film integrity regardless of metal oxide thickness.
Implementation Method 1
In a first annealing step, the first electrode film, the capacitive insulator, and the metal oxide, which are laminated on the substrate, are annealed
Data Source
AI summary
A method of manufacturing a semiconductor device includes a first laminating step, a second laminating step, a third laminating step, a first annealing step, and a fourth laminating step. In the first laminating step, a first electrode film is laminated on a substrate. In the second laminating step, a capacitive insulator is laminated on the first electrode film. In the third laminating step, a metal oxide is laminated on the capacitive insulator. In the first annealing step, the first electrode film, the capacitive insulator, and the metal oxide, which are laminated on the substrate, are annealed. In the fourth laminating step, a second electrode film is laminated on the annealed metal oxide. The capacitive insulator is an oxide that contains at least one of zirconium and hafnium, and the metal oxide is an oxide that contains at least one of tungsten, molybdenum, and vanadium.