Capacitor Storage Node Sidewall Thickness Profile

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Solution Overview

Problem

High aspect ratio container-shaped storage nodes in capacitors are structurally weak and prone to toppling, twisting, and breaking due to their increased height and decreased width, which existing methodologies such as lattice support systems fail to adequately address.

Innovation Solution

The formation of container-shaped storage nodes with sidewalls that are thinner at the upper regions and thicker at the lower regions, achieved through selective etching and sacrificial material removal, enhances stability while maintaining high capacitance by reducing the mechanical load on the lower portions.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If container-shaped storage nodes are formed to higher aspect ratios to achieve desired capacitance levels, then capacitance increases and semiconductor real estate consumption decreases, but structural strength deteriorates causing toppling, twisting and breaking

Engineering Contradiction:
ImprovecapacitanceVSAvoidstructural strength
Core Design Contradiction:
Quantity of substanceVSStrength

Solution Approach 1:

The patent applies local quality by varying the sidewall thickness along the vertical dimension of the container-shaped storage node. The lower portion has thicker sidewalls for structural support, while the upper portion has thinner sidewalls to maximize capacitive surface area. This non-uniform thickness distribution optimizes both mechanical strength and capacitance by assigning different structural qualities to different regions of the same component.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent segments the sidewall structure into distinct regions with different thickness characteristics. The sidewall is divided into a lower thicker portion and an upper thinner portion, creating segmented structural zones that independently fulfill different functions: the lower segment provides mechanical stability while the upper segment maximizes capacitive surface area.

Inventive Principle:
Principle #1Segmentation

2Area of stationary object

If container-shaped storage nodes are formed to higher aspect ratios to decrease semiconductor real estate consumption, then footprint area decreases, but structural stability deteriorates causing toppling and twisting

Engineering Contradiction:
Improvefootprint areaVSAvoidstructural stability
Core Design Contradiction:
Area of stationary objectVSStability of the object's composition

Solution Approach 1:

The patent implements local quality by creating a non-uniform sidewall thickness profile where the lower portion has greater thickness for enhanced structural stability and the upper portion has reduced thickness. This localized variation in structural quality allows the container to maintain stability at its base while achieving the high aspect ratio needed for minimal footprint area.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent resolves the footprint-area-versus-stability contradiction by transitioning from a two-dimensional footprint optimization to a three-dimensional structural solution. Instead of simply making the container taller, the patent introduces vertical dimensionality to the sidewall thickness, creating a tapered profile that distributes structural load more effectively throughout the height of the container.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Data Source

PatentUS8766347B2Capacitors
Publication Date: 2014.07.01 MICRON TECHNOLOGY INC
  • US8766347B2 patent drawing
  • US8766347B2 patent drawing
  • US8766347B2 patent drawing

AI summary

Some embodiments include capacitors. The capacitors may include container-shaped storage node structures that have, along a cross-section, a pair of upwardly-extending sidewalls. Individual sidewalls may have a narrower segment over a wider segment. Capacitor dielectric material and capacitor electrode material may be along the narrower and wider segments of the sidewalls. Some embodiments include methods of forming capacitors in which an initial container-shaped storage node structure is formed to have a pair of upwardly-extending sidewalls along a cross-section, with the sidewalls being of thickness that is substantially constant or increasing from a base to a top of the initial structure. The initial structure is then converted into a modified storage node structure by reducing thicknesses of upper segments of the sidewalls while leaving thicknesses of lower segments of the sidewalls substantially unchanged. Capacitor dielectric material and capacitor electrode material are formed along the modified storage node structure.