Semiconductor Capacitor Support Pattern Structure for Leakage Reduction

Resolve Bottlenecks,
Find Innovative SolutionsGenerate Solutions

Solution Overview

Problem

As semiconductor devices, such as DRAM, integrate more densely, the area of each element decreases while the required capacitance of capacitors increases, leading to challenges in maintaining reliability and capacitance due to the three-dimensional shape of lower electrodes and increased height or cylindrical shapes.

Innovation Solution

A method of manufacturing semiconductor devices involves forming a mold layer and a preliminary support layer on a substrate, removing portions to create voids and open areas, filling these with sacrificial layers, and replacing the preliminary support layers with support patterns to enhance the structure and reduce leakage current, allowing for closer capacitor placement and increased capacitance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If the area of each element is decreased to increase integration degree, then the integration density increases, but the capacitance of capacitors decreases

Engineering Contradiction:

Improveintegration densityVSAvoidcapacitance

Core Design Contradiction:

ProductivityVSQuantity of substance

Solution Approach 1:

The patent transitions from planar two-dimensional capacitor layouts to three-dimensional structures by forming lower electrodes with cylindrical or pillar shapes that extend vertically from the substrate. This dimensional change allows capacitors to occupy vertical space in addition to horizontal space, thereby maintaining or increasing capacitance values even as the horizontal area per element is reduced to achieve higher integration density.

Inventive Principle:

Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The patent implements a nested structure where support patterns are positioned between and around the lower electrodes, creating a hierarchical arrangement. The support patterns are embedded within the capacitor structure at multiple levels, with first support patterns at lower heights and second support patterns at higher heights, allowing compact packing while maintaining electrical isolation and structural integrity.

Inventive Principle:

Principle #7Nested doll (Nesting)

2Quantity of substance

If the lower electrode is given a three-dimensional shape or increased height to maintain capacitance, then the capacitance is maintained, but the manufacturing complexity increases

Engineering Contradiction:

ImprovecapacitanceVSAvoidmanufacturing complexity

Core Design Contradiction:

Quantity of substanceVSDevice complexity

Solution Approach 1:

The patent forms support patterns before forming the upper electrodes, creating a pre-assembled framework that defines the final capacitor geometry. The support patterns are formed at different height levels using sequential deposition and planarization steps, establishing the three-dimensional structure in advance before the final electrode assembly, thereby simplifying subsequent manufacturing steps.

Inventive Principle:

Principle #10Preliminary action

Solution Approach 2:

The patent divides the support structure into multiple discrete support patterns positioned at different height levels and locations. First support patterns are formed at lower heights between lower electrodes, while second support patterns are formed at higher heights, creating a segmented hierarchical structure that simplifies manufacturing by allowing independent formation and optimization of each support level.

Inventive Principle:

Principle #1Segmentation

3Productivity

If capacitors are placed closer together to increase integration density, then the integration density increases, but leakage current between capacitors increases

Engineering Contradiction:

Improveintegration densityVSAvoidleakage current

Core Design Contradiction:

ProductivityVSObject-generated harmful factors

Solution Approach 1:

The patent introduces support patterns as intermediary structures positioned between adjacent lower electrodes. These support patterns act as physical barriers and electrical isolators that prevent direct interaction and leakage current between closely spaced capacitors. The support patterns are formed from insulating materials and extend vertically to bridge gaps between electrodes, enabling closer spacing while maintaining electrical isolation.

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent employs composite material structures where support patterns are formed from combinations of insulating materials deposited in multiple layers. The support patterns may include different dielectric materials with complementary properties, creating a composite structure that provides both electrical isolation and mechanical support, enabling dense capacitor packing without increasing leakage current.

Inventive Principle:

Principle #40Composite materials

Data Source

PatentUS9496266B2Semiconductor device including a capacitor and a method of manufacturing the same

Publication Date: 2016.11.15 SAMSUNG ELECTRONICS CO LTD

AI summary

A method of manufacturing a semiconductor device is provided. The method includes sequentially forming a mold layer and a preliminary support layer on a substrate, forming a plurality of lower electrodes through the preliminary support layer and the mold layer, removing a portion of the preliminary support layer between the plurality of lower electrodes to form a preliminary support layer pattern having an open area exposing a top surface of the mold layer, removing the mold layer to form a void between the substrate and the preliminary support layer pattern, filling the open area and the void with a sacrificial layer, and replacing the preliminary support layer pattern with a support pattern.