Vertical Support Pillars for Capacitor Structure Collapse Prevention
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Solution Overview
Problem
The intermediate structure in semiconductor device manufacturing, particularly during the formation of capacitor structures, is prone to collapsing when sacrificial layers are removed, leading to a lower manufacturing yield due to the lack of structural support.
Innovation Solution
Incorporating a vertical supporting structure that connects horizontal supporting layers to provide additional rigidity and prevent collapse, enhancing the overall structure of the semiconductor device.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If sacrificial layers are removed to define spaces for capacitor electrodes, then capacitor structure formation is enabled, but the intermediate structure becomes prone to collapsing
Solution Approach 1:
The patent applies preliminary action by forming supporting pillars before removing the sacrificial layers. These pillars are created in advance to provide structural support during the subsequent sacrificial layer removal process, preventing intermediate structure collapse while enabling proper capacitor electrode formation.
Solution Approach 2:
The supporting pillars act as intermediary structures that temporarily maintain the integrity of the intermediate structure during manufacturing. These pillars serve as mediators between the sacrificial layers and the final capacitor structure, providing necessary support during the critical removal phase and ensuring manufacturing precision is achieved.
2Reliability
If the intermediate structure is reinforced to prevent collapse, then manufacturing yield is improved, but device complexity increases
Solution Approach 1:
The patent applies segmentation by dividing the supporting structure into discrete pillars rather than using a continuous support layer. This segmented approach provides necessary structural reinforcement to improve manufacturing yield while minimizing added complexity, as the pillars are formed using standard photolithography and etching processes already present in the manufacturing flow.
Data Source
AI summary
A semiconductor device and a method for manufacturing the same are provided. The semiconductor device includes a substrate, a lower horizontal supporting layer, an upper horizontal supporting layer, a vertical supporting structure, and a first capacitor electrode. The lower horizontal supporting layer is disposed on the substrate. The upper horizontal supporting layer is disposed on the lower horizontal supporting layer. The vertical supporting structure extends between the lower horizontal supporting layer and the upper horizontal supporting layer. The first capacitor electrode is disposed on the substrate and extends from the lower horizontal supporting layer to the upper horizontal supporting layer.