Semiconductor Capacitor Support Pattern for Stress Relief
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Solution Overview
Problem
Semiconductor devices face challenges in achieving high capacitance and reliability due to stress applied to capacitors, which affects their mechanical and electrical performance.
Innovation Solution
The semiconductor device incorporates a support pattern with varying proportions of sidewall contact areas for functional and dummy capacitors, where the proportion of the support pattern-contacting sidewalls is higher for dummy capacitors to increase support force and lower for functional capacitors to maintain high capacitance, thereby relaxing stress and enhancing reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the support pattern contacts a larger proportion of the sidewall of the first electrode, then the support force increases and mechanical reliability improves, but the capacitance of the functional capacitor decreases
Solution Approach 1:
The patent applies different support patterns to different regions: dummy capacitors receive greater support pattern contact (larger contact proportion) while functional capacitors receive smaller support pattern contact (smaller contact proportion). This local differentiation allows dummy capacitors to provide mechanical support without significantly impacting the capacitance of functional capacitors, resolving the contradiction between mechanical reliability and capacitance.
Solution Approach 2:
The patent segments the capacitors into functional capacitors and dummy capacitors, assigning different support requirements to each segment. Dummy capacitors are positioned to receive more support pattern contact to provide structural support, while functional capacitors are positioned to maintain larger electrode surfaces for capacitance. This segmentation allows the system to achieve both high mechanical reliability and sufficient capacitance.
2Quantity of substance
If the first electrode extends further from the substrate surface to increase capacitance, then the capacitance of functional capacitors increases, but the mechanical stress on the capacitor structure increases
Solution Approach 1:
The support pattern is formed in advance to contact and support the first electrodes before they are subjected to mechanical stress during device operation. By establishing this support structure beforehand, the patent prevents excessive mechanical stress from developing, allowing the first electrodes to extend further from the substrate surface to increase capacitance without compromising structural integrity.
Solution Approach 2:
The support pattern acts as an intermediary element between the first electrodes and the substrate. It provides mechanical support to the extended first electrodes, distributing and reducing the mechanical stress that would otherwise be concentrated on the capacitor structure. This allows the first electrodes to extend further for increased capacitance while maintaining mechanical reliability.
3Manufacturing precision
If dummy capacitors are used to improve manufacturing margins, then manufacturing precision improves, but the device complexity increases
Solution Approach 1:
The dummy capacitors serve multiple functions: they improve manufacturing margins by providing process buffers and yield improvement, and they provide mechanical support to the capacitor array. By making the dummy capacitors structurally similar to functional capacitors, the patent achieves multi-functionality without significantly increasing device complexity, as the same fabrication processes can be used for both functional and dummy capacitors.
Data Source
AI summary
The invention provides a semiconductor device including a capacitor capable of securing capacity and exhibiting improved reliability and a semiconductor package comprising the same. The semiconductor device includes: a substrate having a cell block; a plurality of capacitors, which are in the cell block of the substrate and have first electrodes; and a support pattern, which contacts sidewalls of the first electrodes of the plurality of capacitors and supports the plurality of capacitors, wherein the support pattern includes an upper support pattern including: a first upper pattern having a plate-like structure connected as a whole in the cell block; and a second upper pattern, which contacts a bottom surface of the first upper pattern and has a top surface having a smaller area than the bottom surface of the first upper pattern, the upper support pattern contacting sidewalls of upper ends of the first electrodes.