Capacitor With Segmented Supporting Layer Patterns
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Solution Overview
Problem
In highly integrated semiconductor devices, cylinder type capacitors face instability due to slanting or inclining lower electrodes, leading to electrical connections between adjacent electrodes and bridge failures, necessitating a stable capacitor structure with increased surface area in reduced unit cell sizes.
Innovation Solution
A capacitor design featuring stacked storage electrodes with supporting layer patterns that extend between adjacent electrodes, preventing slanting and inclining, and a method of forming these capacitors using specific materials and patterning techniques to ensure stability and high capacitance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the height of the lower electrode of the cylinder type capacitor is increased to increase capacitance, then the capacitance increases, but the lower electrode becomes unstable and inclines or slants
Solution Approach 1:
The lower electrode is divided into multiple segments along its height, with supporting layers positioned at different levels to provide distributed support. This segmentation prevents the electrode from inclining or slanting while maintaining the required height and capacitance.
Solution Approach 2:
Supporting layers are introduced as intermediary structures between the lower electrode and the surrounding environment. These supporting layers provide mechanical support and prevent the lower electrode from becoming unstable, enabling the electrode to maintain its shape at increased heights.
2Quantity of substance
If the lower electrode inclines or slants, then the capacitance may increase due to larger effective area, but adjacent lower electrodes become electrically connected causing bridge failure
Solution Approach 1:
The supporting layers divide the lower electrode into stable segments, preventing lateral displacement and inclination. This ensures that adjacent electrodes remain properly separated and electrically isolated, avoiding bridge failures while maintaining capacitance.
Solution Approach 2:
The supporting layers are positioned in advance to counteract the tendency of the lower electrode to incline or slant. By providing preemptive mechanical support, the structure prevents the electrode from reaching a state where electrical connection with adjacent electrodes could occur.
3Productivity
If the unit cell size is reduced for high integration, then the integration density increases, but the capacitor structure becomes less stable
Solution Approach 1:
Supporting layers are introduced at multiple vertical levels within the capacitor structure, utilizing the vertical dimension to provide stability. This multi-level support system enables the capacitor to maintain structural integrity in reduced unit cell sizes while achieving high integration density.
Solution Approach 2:
The capacitor structure is segmented into multiple levels with supporting layers at different heights, creating a stable framework that can be densely packed. This segmentation allows the capacitor to achieve high integration density without sacrificing structural stability.
Data Source
AI summary
A capacitor includes a substrate, a plurality of first storage electrodes, a plurality of second storage electrodes, a first supporting layer pattern, a dielectric layer and a plate electrode. A plurality of contact pads is formed I the substrate. The first storage electrodes are arranged along lines parallel with a first direction and electrically connected to the contact pads, respectively. The second storage electrodes are respectively stacked on the first storage electrodes. The first supporting layer pattern extends in a direction parallel with the first direction between adjacent second storage electrodes and makes contact with the adjacent second storage electrodes to support the second storage electrodes. The dielectric layer is formed on the first and second storage electrodes. The plate electrode is formed on the dielectric layer.